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    RJK0332DPB-01

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0332DPB-01 R07DS0268EJ0500 Previous: REJ03G1641-0400 Rev.5.00 Mar 01, 2011 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0332DPB-01 R07DS0268EJ0500 REJ03G1641-0400) PTZZ0005DA-A RJK0332DPB-01

    RJK0332DPB-01#J0

    Abstract: RJK0332DPB-01
    Text: Preliminary Datasheet RJK0332DPB-01 R07DS0268EJ0500 Previous: REJ03G1641-0400 Rev.5.00 Mar 01, 2011 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK0332DPB-01 R07DS0268EJ0500 REJ03G1641-0400) PTZZ0005DA-A RJK0332DPB-01#J0 RJK0332DPB-01