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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching


    Original     		PDF RQK0303MGDQA R07DS0306EJ0500 REJ03G1276-0400) PLSP0003ZB-A 150ctronics

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A)  Low drive current  High speed switching


    Original     		PDF RQK0303MGDQA R07DS0306EJ0500 REJ03G1276-0400) PLSP0003ZB-A