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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N2DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0783EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03N2DPA R07DS0783EJ0110 PWSN0008DC-B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N2DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0783EJ0110 Power Switching Rev.1.10 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03N2DPA R07DS0783EJ0110 PWSN0008DC-B