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    RFD16 Price and Stock

    RF Industries RFD-1610-SR2

    7/16 DIN Male R/A; Low PIM
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    DigiKey RFD-1610-SR2 Bulk 583 1
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    Richardson RFPD RFD-1610-SR2 1
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    RF Industries RFD-1605-2-E

    7/16 DIN MALE CRIMP; 50 OHMS
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    DigiKey RFD-1605-2-E Bag 201 1
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    RF Industries RFD-1650-2

    7/16 DIN MALE-7/16 DIN MALE
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    DigiKey RFD-1650-2 Bag 195 1
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    RF Industries RFD-1601DS-H8

    7/16 DIN Male; Low PIM
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    DigiKey RFD-1601DS-H8 Bulk 138 1
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    RF Industries RFD-1660-WB

    7/16 FEMALE-7/16 MALE
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    DigiKey RFD-1660-WB Bag 130 1
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    RFD16 Datasheets (63)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD16N02 Intersil 16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET Original PDF
    RFD16N02L Harris Semiconductor 16A, 20V, 0.022 ohm, N-Channel Logic Level Power MOSFET Original PDF
    RFD16N02L Intersil 16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET Original PDF
    RFD16N02LSM Harris Semiconductor 16A, 20V, 0.022 ohm, N-Channel Logic Level Power MOSFET Original PDF
    RFD16N02LSM Intersil 16A, 20V, 0.022 ?, N-Channel, Logic Level, Power MOSFET Original PDF
    RFD16N03 Fairchild Semiconductor 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Original PDF
    RFD16N03 Intersil 16A, 30V, 0.025 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N03L Fairchild Semiconductor 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N03L Fairchild Semiconductor 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Original PDF
    RFD16N03L Intersil 16A, 30V, 0.025 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N03LSM Fairchild Semiconductor 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N03LSM Harris Semiconductor 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Original PDF
    RFD16N03LSM Intersil 16A, 30V, 0.025 ?, Logic Level, N-Channel Power MOSFETs Original PDF
    RFD16N03LSM Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFD16N03LSM9A Fairchild Semiconductor 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET Original PDF
    RFD16N05 Fairchild Semiconductor 16A, 50V, 0.047 ?, N-Channel Power MOSFETs Original PDF
    RFD16N05 Fairchild Semiconductor 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs Original PDF
    RFD16N05 Harris Semiconductor 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFD16N05 Intersil 16A, 50V, 0.047 ?, N-Channel Power MOSFETs Original PDF
    RFD16N05 Toshiba Power MOSFETs Cross Reference Guide Original PDF

    RFD16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16N03

    Abstract: No abstract text available
    Text: RFD16N03L, RFD16N03LSM Data Sheet Title FD1 03L D16 3LS bt A, V, 22 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA April 1999 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using


    Original     		PDF RFD16N03L, RFD16N03LSM 16N03

    TO-252AA fairchild

    Abstract: RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFD16N05L, RFD16N05LSM TO-252AA fairchild RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334

    TH 2267

    Abstract: AN7254 AN9321 AN9322 RFD16N05 RFD16N05SM RFD16N05SM9A TB334
    Text: RFD16N05, RFD16N05SM Data Sheet 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    Original     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. TH 2267 AN7254 AN9321 AN9322 RFD16N05SM9A TB334

    AN7254

    Abstract: AN7260 AN9321 AN9322 RFD16N02L RFD16N02LSM RFD16N02LSM9A
    Text: RFD16N02L, RFD16N02LSM 16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM AN7254 AN7260 AN9321 AN9322 RFD16N02LSM9A

    RFD16N02L

    Abstract: RFD16N02LSM RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322
    Text: RFD16N02L, RFD16N02LSM S E M I C O N D U C T O R 16A, 20V, 0.022Ω, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    Original     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARRIS RFD16N02LSM9A AN7254 AN7260 AN9321 AN9322

    16n06l

    Abstract: 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027
    Text: RFD16N06LE, RFD16N06LESM Data Sheet 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD16N06LE, RFD16N06LESM 16n06l 16n06 AN7254 AN7260 RFD16N06LE RFD16N06LESM RFD16N06LESM9A TB334 16N06LE TA49027

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFD16N05L, RFD16N05LSM

    38E-3

    Abstract: JEDEC TO-251AA RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334
    Text: RFD16N05L, RFD16N05LSM Data Sheet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon,


    Original     		PDF RFD16N05L, RFD16N05LSM 38E-3 JEDEC TO-251AA RFD16N05L RFD16N05LSM RFD16N05LSM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		PDF RFD16N06LESM

    pspice model

    Abstract: F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 RFD16N06 RFD16N06SM mosfet motor dc 48v
    Text: RFD16N06, RFD16N06SM S E M I C O N D U C T O R 16A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 60V JEDEC TO-251AA • rDS ON = 0.047Ω SOURCE DRAIN GATE DRAIN (FLANGE) • Temperature Compensating PSPICE Model


    Original     		PDF RFD16N06, RFD16N06SM O-251AA 175oC O-252AA RFD16N06 RFD16N06SM 1e-30 07e-3 19e-7) pspice model F16N06 RFD16N06SM9A AN9321 AN7254 AN7260 FIGURE13 mosfet motor dc 48v

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LESM October 2013 Data Sheet N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD16N06LESM RFD16N06LESM

    16n03l

    Abstract: 16N03 RFD16N03LSM RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322 RFD16N03L
    Text: RFD16N03L, RFD16N03LSM S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.022Ω • Temperature Compensating PSPICE Model


    Original     		PDF RFD16N03L, RFD16N03LSM O-251AA O-252AA RFD16N03L RFD16N03LSM 1e-30 95e-4 92e-3 29e-5) 16n03l 16N03 RFD16N03LSM9A TA49030 AN7254 AN7260 AN9321 AN9322

    F16N06

    Abstract: N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334
    Text: [ /Title RFD16 N06, RFD16 N06SM /Subject (16A, 60V, 0.047 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFET, TO251AA, TO252AA) /Cre- RFD16N06, RFD16N06SM Semiconductor 16A, 60V, 0.047 Ohm, N-Channel Power MOSFET


    Original     		PDF RFD16 N06SM) O251AA, O252AA) RFD16N06, RFD16N06SM 1e-30 07e-3 19e-7) F16N06 N06 MOSFET TO-252AA Package mos fet *16N06 AN9321 RFD16N06 RFD16N06SM RFD16N06SM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD16N06LE, RFD16N06LESM Semiconductor April 1999 Data Sheet 16A, 60V, 0.047 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan     		PDF RFD16N06LE, RFD16N06LESM

    16n03l

    Abstract: No abstract text available
    Text: interrii RFD16N03L, RFD16N03LSM D a ta S h e e t 16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM circuit60 RFD16N03LSM AN7254 AN7260. 16n03l

    16N03LS

    Abstract: 16n03l 9312v 03LSM 16N03
    Text: RFD16N03L, RFD16N03LSM iU HARRIS U U S E M I C O N D U C T O R 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 16A, 30 V • JE D EC T O -251A A r DS ON = 0 . 0 2 2 » • Temperature Compensating PSPICE Model


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM -251A -252A RFD16N03L RFD16N03LSM 61e-13 06e-3 05e-3 57e-6 16N03LS 16n03l 9312v 03LSM 16N03

    cq 724 g diode

    Abstract: No abstract text available
    Text: RFD16N02L, RFD16N02LSM HARRIS S E M I C O N D U C T O R 16A, 20V, 0.022Q, N-Channel Logic Level Power MOSFET May 1997 Features Description • 16A, 20V The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of


    OCR Scan     		PDF RFD16N02L, RFD16N02LSM RFD16N02L RFD16N02LSM 1-800-4-HARR cq 724 g diode

    Untitled

    Abstract: No abstract text available
    Text: RFD16N03L, RFD16N03LSM Semiconductor April 1999 Data Sheet 16A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    OCR Scan     		PDF RFD16N03L, RFD16N03LSM 96e-9 1e-30 95e-4 92e-3 29e-5) 03e-3 45e-5)

    Untitled

    Abstract: No abstract text available
    Text: RFD16N05L, RFD16N05LSM S em iconductor A p ril 1999 D ata S h eet 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		PDF RFD16N05L, RFD16N05LSM 46E-5) 38E-3 66E-3 614E-3 13E-9 14E-8)

    Untitled

    Abstract: No abstract text available
    Text: interrii RFD16N05, RFD16N05SM D ata S h e e t 16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon,


    OCR Scan     		PDF RFD16N05, RFD16N05SM RFD16N05 RFD16N05SM TA09771. AN7254 AN7260.

    TA09871

    Abstract: RFD16N05LSM9A
    Text: RFD16N05L, RFD16N05LSM i n t e is gI D a ta S h e e t 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI


    OCR Scan     		PDF RFD16N05L, RFD16N05LSM TA09871 RFD16N05LSM9A

    16n06l

    Abstract: pspice model for ttl
    Text: m W HARRIS S E M I C O N D U C T O R March1994 RFD16N06LE RFD16N06LESM 16A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs MegaFETs Packaging Features JEDEC TO-251 AA TOP VIEW • 16A, 60V • rDS(ON) = 0 .0 4 7 Q • 2KV ESD Protected


    OCR Scan     		PDF RFD16N06LE RFD16N06LESM O-251 h1994 O-252AA RFD16N06LESM 6756e-4 425e-7 59e-10 16n06l pspice model for ttl

    304E3

    Abstract: rfd16n05sm9a 66E-6
    Text: RFD16N05, RFD16N05SM HARRIS S E M I C O N D U C T O R 16A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-251AA • 16A, 50V • r DS O N = 0-047U • Temperature Compensating PSPICE Model ORAIN (FLANGE)


    OCR Scan     		PDF RFD16N05, RFD16N05SM O-251AA 0-047U O-252AA RFD16N05 RFD16N05SM O-251AA O-252AA F16N05 304E3 rfd16n05sm9a 66E-6

    th 2267.1

    Abstract: 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1
    Text: h a f r r RFD16N05 RFD16N05SM i s May 1992 N -Channel Enhancem ent Mode Power Field Effect Transistors MegaFETs Packages Features T0 -251 A A • 16A, 50V TOP VIEW • r DS(on) = 0.047 i i >SOURCE • UIS SOA Rating Curve (Single Pulse) DRAIN TAB” • SOA is P o w er-D issipation Lim ited


    OCR Scan     		PDF RFD16N05 RFD16N05SM -252AA RFD16N05SM AN-7260. th 2267.1 2267.1 TH 2267-1 16N05SM th+2267.1 MCP3550-60T-E/th 2267.1