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    RJK2076DPA Search Results

    RJK2076DPA Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJK2076DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 200V 20A 85Mohm Wpak3F) Visit Renesas Electronics Corporation
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    RJK2076DPA Price and Stock

    Renesas Electronics Corporation RJK2076DPA-00-J5A

    MOSFET N-CH 200V 20A WPAK
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    DigiKey RJK2076DPA-00-J5A Reel 3,000 3,000
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    • 10000 $1.555
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    RJK2076DPA-00-J5A Cut Tape 3,000 1
    • 1 $4.43
    • 10 $2.923
    • 100 $4.43
    • 1000 $1.58515
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    RJK2076DPA-00-J5A Digi-Reel 3,000 1
    • 1 $4.43
    • 10 $2.923
    • 100 $4.43
    • 1000 $1.58515
    • 10000 $1.58515
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    Renesas Electronics Corporation RJK2076DPA-00#J5A

    Trans MOSFET N-CH 200V 20A 8-Pin WPAK Embossed T/R - Tape and Reel (Alt: RJK2076DPA-00#J5A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RJK2076DPA-00#J5A Reel 18 Weeks 3,000
    • 1 $1.659
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    Mouser Electronics RJK2076DPA-00#J5A 3,000
    • 1 $3.81
    • 10 $2.85
    • 100 $2.07
    • 1000 $1.63
    • 10000 $1.57
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    Renesas Electronics America RJK2076DPA-00#J5A Tape & Reel (TR) 3,000 1
    • 1 $4.43
    • 10 $2.923
    • 100 $2.0676
    • 1000 $1.58515
    • 10000 $1.555
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    RJK2076DPA Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK2076DPA-00#J5A Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 200V 20A WPAK Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0100 Rev.1.00 Jul 27, 2012 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)


    Original     		PDF RJK2076DPA R07DS0859EJ0100 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK2076DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0859EJ0200 Rev.2.00 Jan 08, 2013 Features • Low on-resistance RDS on = 0.068  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Very low gate charge Qg = 19 nC typ. (at VDD = 160 V, VGS = 10 V, ID = 20 A, Ta = 25C)


    Original     		PDF RJK2076DPA R07DS0859EJ0200 PWSN0008DE-A

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1