Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RJU60C3SDPD Search Results

    RJU60C3SDPD Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RJU60C3SDPD-E0#J2 Renesas Electronics Corporation Fast Recovery Diodes, TO-252, /Embossed Tape Visit Renesas Electronics Corporation
    SF Impression Pixel

    RJU60C3SDPD Price and Stock

    Renesas Electronics Corporation RJU60C3SDPD-E0-J2

    DIODE GEN PURP 600V 10A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RJU60C3SDPD-E0-J2 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    RJU60C3SDPD Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJU60C3SDPD-E0#J2 Renesas Electronics Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST RECOVERY TO-252 Original PDF

    RJU60C3SDPD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C3SDPD Single Diode Fast Recovery Diode R07DS0375EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 90 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)


    Original     		PDF RJU60C3SDPD R07DS0375EJ0100 PRSS0004ZJ-A O-252)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C3SDPD 600V - 30A - Single Diode Fast Recovery Diode R07DS0375EJ0200 Rev.2.00 Nov 07, 2012 Features • Fast reverse recovery time: trr = 90 ns typ. at IF = 10 A, di/dt = 100 A/s  Low forward voltage: VF = 1.4 V typ. (at IF = 30 A)


    Original     		PDF RJU60C3SDPD R07DS0375EJ0200 PRSS0004ZJ-A O-252)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJU60C3SDPD Single Diode Fast Recovery Diode R07DS0375EJ0100 Rev.1.00 Apr 26, 2011 Features • Fast reverse recovery time: trr = 90 ns typ. at IF = 10 A, di/dt = 100 A/ s • Low forward voltage: VF = 1.4 V typ. (at IF = 30 A) • Low reverse current: IR = 1 μA max. (at VR = 600 V)


    Original     		PDF RJU60C3SDPD R07DS0375EJ0100 PRSS0004ZJ-A O-252)

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0
    Text: Silicon Carbide and Silicon Fast-recovery Diodes High Performance and High Efficiency Renesas Electronics has a line-up of 10A to 30A, 600V, Silicon Carbide Power Diodes designed to meet Key Features and Target Applications the need for better energy efficiency in high-output


    Original     		PDF RJS6005TDPP; 0212/100/in-house/LAH/JE SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A application notes frd silicon carbide RJS6004TDPN-E0 rju60c6 2202L RJU6052SDPD-E0 RJU60C3SDPD-E0