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Catalog Datasheet	MFG & Type	Document Tags	PDF
BUK437-400A Abstract: BUK437-400B Text: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK437 -400A -400B BUK437-400A BUK437-400B	PDF
Untitled Abstract: No abstract text available Text: _ _-61C 01279 ’ Ò' ; ÌJ - / 0 t.1 DE \|ñ3bñt,D5 aODlE?^ 0 ^ SOLITRON DEVICES INC olitron Devices, Inc. S P E C I F I C A T I O N S M A X IM U M R A T IN G S NO.: 2N3713 TYPE: NPN E P I BASE CASE: T O -3 . 80 V Voltage, Collector to Emitter V CE0	OCR Scan	2N3713 5031/S031D	PDF

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BUK437-400A

Abstract: BUK437-400B
Text: N AMER SSE P H IL IP S /D IS C R E T E D b 1=53^ 31 Q D S031D S BUK437-400A BUK437-400B PowerMOS transistor T -3 7 -/S T Q U IC K REFER ENC E DATA G EN ER A L D ESC R IPTIO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

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BUK437 -400A -400B BUK437-400A BUK437-400B

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Untitled

Abstract: No abstract text available
Text: _ _-61C 01279 ’ Ò' ; ÌJ - / 0 t.1 DE |ñ3bñt,D5 aODlE?^ 0 ^ SOLITRON DEVICES INC olitron Devices, Inc. S P E C I F I C A T I O N S M A X IM U M R A T IN G S NO.: 2N3713 TYPE: NPN E P I BASE CASE: T O -3 . 80 V Voltage, Collector to Emitter V CE0

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2N3713 5031/S031D

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