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    S1318 Search Results

    S1318 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS1-3182-9+ Renesas Electronics Corporation ARINC 429 Bus Interface Line Driver Circuit Visit Renesas Electronics Corporation
    HS1-3182-8 Renesas Electronics Corporation ARINC 429 Bus Interface Line Driver Circuit Visit Renesas Electronics Corporation
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    S1318 Price and Stock

    ABLIC Inc. S-1318A33-A4T2U4

    IC REG LINEAR 3.3V 100MA HSNT4-B
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    DigiKey S-1318A33-A4T2U4 Reel 10,000 10,000
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    Avnet Americas S-1318A33-A4T2U4 Reel 16 Weeks 10,000
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    Verical S-1318A33-A4T2U4 100 100
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    CoreStaff Co Ltd S-1318A33-A4T2U4 100
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    ABLIC Inc. S-1318B33-M5T1U4

    IC REG LINEAR 3.3V 100MA SOT23-5
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    DigiKey S-1318B33-M5T1U4 Reel 6,000 3,000
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    Mouser Electronics S-1318B33-M5T1U4
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    Chip1Stop S-1318B33-M5T1U4 Cut Tape 2,980
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    ABLIC Inc. S-1318A33-M5T1U4

    IC REG LINEAR 3.3V 100MA SOT23-5
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    DigiKey S-1318A33-M5T1U4 Cut Tape 4,699 1
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    S-1318A33-M5T1U4 Digi-Reel 4,699 1
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    Mouser Electronics S-1318A33-M5T1U4 3,122
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    Quest Components S-1318A33-M5T1U4 2,312
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    CoreStaff Co Ltd S-1318A33-M5T1U4 2,940
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    Century Spring Corp S-1318CS

    COMPRESSION STEEL 0.156" 1.250"
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    DigiKey S-1318CS Box 4,598 1
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    ABLIC Inc. S-1318D18-M5T1U4

    IC REG LINEAR 1.8V 100MA SOT23-5
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    DigiKey S-1318D18-M5T1U4 Reel 3,000 3,000
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    Mouser Electronics S-1318D18-M5T1U4 3,000
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    Onlinecomponents.com S-1318D18-M5T1U4
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    Quest Components S-1318D18-M5T1U4 74
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    Find more S1318 price and stock on Findchips.com

    S1318 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S-1318A12-M5T1U4 ABLIC IC REG LINEAR 1.2V 100MA SOT23-5 Original PDF
    S-1318A18-A4T2U4 ABLIC IC REG LINEAR 1.8V 100MA HSNT4-B Original PDF
    S-1318A18-M5T1U4 ABLIC IC REG LINEAR 1.8V 100MA SOT23-5 Original PDF
    S-1318A30-M5T1U4 ABLIC IC REG LINEAR 3V 100MA SOT23-5 Original PDF
    S-1318A33-A4T2U4 ABLIC IC REG LINEAR 3.3V 100MA HSNT4-B Original PDF
    S-1318A33-M5T1U4 ABLIC IC REG LINEAR 3.3V 100MA SOT23-5 Original PDF
    S-1318B18-M5T1U4 ABLIC IC REG LINEAR 1.8V 100MA SOT23-5 Original PDF
    S-1318B33-M5T1U4 ABLIC IC REG LINEAR 3.3V 100MA SOT23-5 Original PDF
    S-1318D18-M5T1U4 ABLIC IC REG LINEAR 1.8V 100MA SOT23-5 Original PDF
    S-1318D23-M5T1U4 ABLIC IC REG LINEAR 2.3V 100MA SOT23-5 Original PDF
    S-1318D28-A4T2U4 ABLIC IC REG LINEAR 2.8V 100MA HSNT4-B Original PDF
    S-1318D28-M5T1U4 ABLIC IC REG LINEAR 2.8V 100MA SOT23-5 Original PDF
    S-1318D30-M5T1U4 ABLIC IC REG LINEAR 3V 100MA SOT23-5 Original PDF
    S-1318D33-A4T2U4 ABLIC IC REG LINEAR 3.3V 100MA HSNT4-B Original PDF
    S-1318D33-M5T1U4 ABLIC IC REG LINEAR 3.3V 100MA SOT23-5 Original PDF

    S1318 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUZ 78

    Abstract: C67078-S1318-A2 142 mh
    Text: SIPMOS Power Transistor BUZ 78 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 78 800 V 1.5 A 8.0 Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current, TC = 25 ˚C


    Original     		O-220 C67078-S1318-A2 BUZ 78 C67078-S1318-A2 142 mh PDF

    S1518

    Abstract: S131* crystal ST1518 S1318
    Text: SARONIX B.V. DATA SHEET 9922 517 622. series Voltage Controlled Crystal Oscillator Type S1318/S1518 in plastic S package CMOS/TTL Product specification File under SARONIX B.V., SBV2 1998 July 14 SaRonix B.V. Doetinchem, The Netherlands Product specification


    Original     		S1318/S1518 SBV2-080 S1518 S131* crystal ST1518 S1318 PDF

    S1518

    Abstract: smd 1518
    Text: SaRonix Voltage Controlled Crystal Oscillator 3V, 5V, HCMOS, SMD Technical Data S1318 / 1518 Series ACTUAL SIZE Frequency Range: 32 MHz to 120 MHz Frequency Stability: ±50 ppm over all conditions: operating temperature, voltage change, load change, calibration tolerance, aging, with VC = 2.5V @ 5V,


    Original     		S1318 DS-171 S1518 smd 1518 PDF

    C67078-S1318-A2

    Abstract: No abstract text available
    Text: BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 78 800 V 1.5 A 8Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-220 C67078-S1318-A2 C67078-S1318-A2 PDF

    S1518

    Abstract: S1318 ST1518 E 32.0000 C 100 khz crystal Saronix Oscillator SMD Plastic DS171
    Text: SaRonix Voltage Controlled Crystal Oscillator 3.3 & 5V, HCMOS, SMD Technical Data S1318 / S1518 Series Frequency Range: 32 MHz to 125 MHz Frequency Stability: ±50 ppm over all conditions: operating temperature, voltage change, load change, calibration tolerance, aging, with VC = 2.5V @ 5V,


    Original     		S1318 S1518 DS-171 ST1518 E 32.0000 C 100 khz crystal Saronix Oscillator SMD Plastic DS171 PDF

    C67078-S1318-A2

    Abstract: No abstract text available
    Text: BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 78 800 V 1.5 A 8Ω TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current


    Original     		O-220 C67078-S1318-A2 C67078-S1318-A2 PDF

    SKY73126-31

    Abstract: ID31 S1191 S1315 S1317
    Text: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description x 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low


    Original     		SKY73126-31: SKY73126-31 201112B ID31 S1191 S1315 S1317 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMM2348ES www.vishay.com Vishay Siliconix Medical N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow 30 RDS(on) () at VGS = 10 V 0.024 RDS(on) () at VGS = 4.5 V 0.032 ID (A)


    Original     		SMM2348ES O-236 OT-23) SMM2348ES* OT-23 SMM2348ES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    SKY73126-31

    Abstract: S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319
    Text: DATA SHEET SKY73126-31: 161.92 MHz High Performance VCO/Synthesizer Applications Description • 3GPP Long-Term Evolution systems Skyworks SKY73126-31 Voltage-Controlled Oscillator VCO /Synthesizer is a fully integrated, high performance signal source for base station transceivers. The device provides low


    Original     		SKY73126-31: SKY73126-31 201112C S1193 S1315 ID31 S1191 S-1315 S1317 PLL 2400 MHZ S1319 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiE868DF www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiE868DF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration Single PowerPAK 1212-8 S S 3.30 mm


    Original     		SQ7415AEN AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2356DS Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. ID (A)a 0.051 at VGS = 10 V 4.3 0.054 at VGS = 4.5 V 4.1 0.070 at VGS = 2.5 V 3.6 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:


    Original     		Si2356DS O-236 OT-23) Si2356DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP


    Original     		Si8475EDB 8475E Si8475EDB-T1-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization:


    Original     		Si8405DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiRA66DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0023 at VGS = 10 V 50 0.0031 at VGS = 4.5 V 50 Qg (Typ.) 19.2 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8 S 6.15 mm


    Original     		SiRA66DP SiRA66DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si7315DN Vishay Siliconix P-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 RDS(on) () Max. ID (A)e 0.315 at VGS = - 10 V - 8.9 0.350 at VGS = - 6 V - 8.7 Qg (Typ.) 15.4 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®


    Original     		Si7315DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS990DN Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) ID (A)f 0.085 at VGS = 10 V 12.1 100 0.090 at VGS = 7.5 V 11.8 0.105 at VGS = 6 V 10.9 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		SiS990DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Siemens diode Ssi

    Abstract: No abstract text available
    Text: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vbs 800 V b 1.5 A ffDS on Package Ordering Code 8 £2 TO-220 AB C67078-S1318-A2 Maximum Ratings Symbol Parameter Values Unit A Continuous drain current


    OCR Scan     		O-220 C67078-S1318-A2 23SbOS i23SbQ5 Siemens diode Ssi PDF

    BUZ 78

    Abstract: No abstract text available
    Text: SIEMENS BUZ 78 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 78 Vds 800 V h ^DS on Package Ordering Code 1.5 A 8 fi TO-220 AB C67078-S1318-A2 Maximum Ratings Parameter Symbol Continuous drain current ¡D Values


    OCR Scan     		O-220 C67078-S1318-A2 BUZ 78 PDF

    BUZ54

    Abstract: s 271 5A BUZ357 BUZ84A BUZ,271 C67078-S1318-A2 BUZ54A C67078-S1010-A3 C67078-S1010-A2
    Text: SIEM EN S SIPMOS" Leistungstransistoren SIPMOS Power Transistors N-Kanal-Anreicherungstypen N channel enhancement types Typ Type Wds V n ¡o A ^D S on m ax Ptot W Bestellnummer Ordering code Gehäuse Package Bild Figure BUZ 78 800 8.0 1.5 40 C67078-S1318-A2


    OCR Scan     		BUZ80A BUZ84A BUZ53A BUZ54A Orderin04 O-204 T0-218 O-218AA O-218 BUZ54 s 271 5A BUZ357 BUZ,271 C67078-S1318-A2 C67078-S1010-A3 C67078-S1010-A2 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT 7MP456 256K 64K x 4-BIT C M O S STATIC RAM PLASTIC SIP M ODULE FEATURES: DESCRIPTION: • High-density 256K (64K x 4) CMOS static RAM module The IDT7MP456 is a 256K (64K x 4-bit) high-speed static RAM m odule constructed on an epoxy laminate surface using four


    OCR Scan     		28-pin IDT7187 7MP456 200mV IDT7MP456 8MP456 S13-182 PDF

    7m812

    Abstract: IDT7M S1319 Idt7m812
    Text: 512K 6 4 K x 8-BIT or 64K x 9-BIT C M O S STATIC RAM M ODULE IDT 7M812 IDT 7M912 FEATURES: DESCRIPTION: • High-density 512K-bi1 C M O S static RAM module • 64K x 8 (IDT7M 812) or 64K x 9 (IDT7M 912) configuration • Fast access times The ID T7M 812/ID T7M 912 are 512K-bit high-speed CM OS


    OCR Scan     		512K-bi1 240yW IDT7187 7M812 7M912 812/ID MIL-STD-883, 7M912 IDT7M S1319 Idt7m812 PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K 64K x 8 SYNCHRONOUS STATIC RAM PLASTIC SIP MODULE FEATURES: • 64K x 8 fu lly s y n ch ro n o u s m em ory • H ig h -s p e e d -2 0 M H z read c y c le tim e • 16-bit syn ch ro n o u s a dd re ss Input • 8-bit synchronous data Input • S y n ch ro n o us c h ip se le ct a n d w rite e na b le


    OCR Scan     		16-bit 7MP6025 P6025 trig512K PDF