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    LSI53C860

    Abstract: UC5601QP LSI53C810
    Text: TECHNICAL MANUAL LSI53C860 PCI to Ultra SCSI I/O Processor Version 2.1 April 2001 S14069 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


    Original     		PDF LSI53C860 S14069 DB14-000171-00, LSI53C860 UC5601QP LSI53C810

    Untitled

    Abstract: No abstract text available
    Text: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.064 220 Qgs (nC) 29 Qgd (nC) 57 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHW47N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.064 Qg max. (nC) 220 • Reduced switching and conduction losses


    Original     		PDF SiHG47N60E O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12