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    S29F040 Search Results

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    S29F040 Price and Stock

    Rochester Electronics LLC TMS29F040-90C5FML

    FLASH, 512KX8, 90NS, PQCC32
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    DigiKey TMS29F040-90C5FML Bulk 160
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    Texas Instruments TMS29F040-90C5FML

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    Bristol Electronics TMS29F040-90C5FML 871
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    TMS29F040-90C5FML 393
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    TMS29F040-90C5FML 62 2
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    • 100 $1.68
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    Rochester Electronics TMS29F040-90C5FML 389 1
    • 1 $1.81
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    Velocity Electronics TMS29F040-90C5FML 346
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    Texas Instruments TMS29F040-90C5FMLR

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    Bristol Electronics TMS29F040-90C5FMLR 595 2
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    • 100 $1.5681
    • 1000 $1.3776
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    Texas Instruments TMS29F040-12C5FML

    TMS29F040 - Flash, 512KX8, 120ns, PQCC32 '
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    Rochester Electronics TMS29F040-12C5FML 1 1
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    ComSIT USA TMS29F040-12C5FML 2,101
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    Texas Instruments TMS29F04010C5FML

    524288 BY 8-BIT FLASH MEMORY Flash, 512KX8, 100ns, PQCC32
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    ComSIT USA TMS29F04010C5FML 30
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    S29F040 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    00D05

    Abstract: AS29F040 29F040 29F040-70
    Text: H ig h P e r f o r m a n c e 512KX8 S V C M O S F la s h EEPRO M « II J J i A S29F040 5 1 2 K X 8 CMOS Flash EEPROM Preliminary information Features • Organization: 5 1 2 Kx 8 • Sector architecture • Low pow er consum ption - 30 m A m a x im u m rea d c u rre n t


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    PDF AS29F040 512KX8 512Kx8 32-pin AS29F040-55TC 9F040-7 AS29F040-70TI 9F040 -90TC 00D05 AS29F040 29F040 29F040-70

    Untitled

    Abstract: No abstract text available
    Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current


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    PDF S29F040 040-90T -120TC -150TC 040-55L 040-70L 040-90L 040-150L

    Untitled

    Abstract: No abstract text available
    Text: H igh Perform ance S12KX8 SV CMOS Flash EEPROM « A S29F040 II II 512K X 8 CMOS Flash EEPROM Preliminary information Features • Low power consumption • Organization: 512Kx8 • Sector architecture - 30 mA m axim um read current - 60 mA m ax im u m program current


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    PDF S12KX8 S29F040 512Kx8 32-pin 29F040-70L AS29F040-70L 29F040-90L S29F040-120L AS29F040

    S1998

    Abstract: .5555b AS29F040 29F040-70
    Text: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current


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    PDF 512KX8 5S/70/90/120/150 32-pin AS29F040-5STC AS29F040-70TC AS29F040-70TI AS29F040-90TC AS29F040-90TI S1998 .5555b AS29F040 29F040-70

    s29f

    Abstract: No abstract text available
    Text: S29F040 4194304-BIT FLASH MEMORY S M J S 8 2 0 A - A P R IL 1 9 9 6 - R E V IS E D J A N U A R Y 1 9 9 7 I * Single Power Supply 5 V ± 10% FM PACKAGE T O P V IE W cm lo co co O r~. < < < < > I5 < i— i l — i l — il— i l — i l — il— i 4 '


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    PDF TMS29F040 4194304-BIT 29LF040/ 29VF040 ComJS820A R-PDSO-G32) s29f

    intel 29F

    Abstract: T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568
    Text: A Fast SRAM cross reference Vendor Cypress Hitachi Code ASCCode Description Code ASC Code CY 7C 185 A S7C 164 81x8 M C M 6264C AS7C164 8Kx8 CY 7C 199 A 57C 256 32K x8 M C M 6206D A S7C2S6 32K x8 C Y 7 C J3 9 9 A S7C 32S6 3 2 K * 8 3V M CM 62V06D A S7C 3256


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    PDF 628127H T7164 712S6 DT71Q08 1S61C64AH LS61C2S6AH IS61LV3216 S61C512 IS61C64 S61LV256 intel 29F T7164 28F Intel LV6416 4c4007 5B810 32kxS 62832 dram cross reference T5C2568

    Untitled

    Abstract: No abstract text available
    Text: I l i ^ h l*i i loi i n ,iih c S I 2k x X r>V C M O S Ma sh MiPKOM •■ \ S 2 >M 40 A S I ?.KX<S CMOS f ldsli I I f'KOM Preliminary information Features • Low power consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t


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    PDF 512KX8 AS29F040-55TC AS29F040-70TC AS29F040-70T1 AS29F040-90TC AS29F040-90TI AS29F040-120TC A529F040-120TI AS29F040-150TC AS29F040-150TI

    AS19F

    Abstract: 29F2C F002T
    Text: O rd e rin g in fo rm a tio n X Ordering inliirmiii um Asynchronous SRAM port numbering system Package type- P= P D IP I - SO I Voltage: SRAM Blank 5 = 5 V 'C M O S D ensity an d —3 ï V C M O S org an ization Po w e r L LL — L o w pow er Acct ss = V e ry lo w p o w e r


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    PDF 150TC 150T1 -150SI 32-bit 64-bit 128-bit 128-bit AS19F 29F2C F002T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary information •■ S29F040 5V 512Kx8 CM OS Flash EE PROM Features • Organization: 51 2 K x8 • Sector architecture - Eight 64K byte sectors - Erase any com bination of sectors or full chip • Single 5.0 ± 0 .5 V pow er supply for read/w rite operations


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    PDF AS29F040 512Kx8 32-pin AS29F040-55TC AS29F040-55TI AS29F040-70TC AS29F040-70TI AS29F040-90TC AS29F040-90TI AS29F040-120TC

    S29F040

    Abstract: TSOP8 ux305
    Text: I t i gl i ’ (1r 11 I' 111 ,i I ]( r SI A \ S Z I 040 | | KxK S V C M O S I l.isli I M ’ K O M I .’ K x H CM O S H u sh I I P H O VI P re lim in a ry in fo rm atio n F eatures • Organization: 512KX8 • Sector architecture • Low power consumption


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    PDF 512KX8 4S29F S29F040 TSOP8 ux305

    s2-1040s

    Abstract: AS29F040-120LC 29F040 29F040-70 AS29F040 AS29F040-55TC 00D102
    Text: A I I i ” h l'i i l o t i n , n u e •■ S I 1k x X S V C M O S I lash I IP KO M \ S 2 > 1 0 4 0 S I ?. Kx <S CMOS I'ldsli I I FROM Preliminary information Features • Low pow er consumption • Organization: 512KX8 • Sector architecture - 3 0 m A m a x im u m re a d c u rre n t


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    PDF 512KX8 32-pin AS29F040-55TC AS29F040-70TC AS29F040-70TI AS29F040-90TC AS29F040-90TI AS29F040-1 A529F040-1 AS29F040-150TC s2-1040s AS29F040-120LC 29F040 29F040-70 AS29F040 AS29F040-55TC 00D102

    29VF040

    Abstract: TMS29F040 29VF04 SMJS820B
    Text: S29F040 524288 BY 8-BIT FLASH MEMORY SM JS820B - AP R IL 1996 - REVISED N O VEM BER 1997 • • • • Single Power Supply 5 V ± 10% - 3.3 V ± 0.3 V - See ’29LF040/29VF040 Data Sheet Literature Number SMJS825 - 2.7 V to 3.6 V - See ’29LF040/29VF040


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    PDF 29LF040/ 29VF040 SMJS825) Ty1996-REVISED R-PDSO-G32) 4040097/E 29VF040 TMS29F040 29VF04 SMJS820B

    .5555b

    Abstract: S29F040 tl4000 29F040-120
    Text: Preliminary infonnation Features • Organization: 512Kx8 • Sector architecture • Low power consumption • Single S.0±0.SV power supply for read/write operations • Sector protection • High speed 55/70/90/120/150 ns address access time • Automated on-chip programming algorithm


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    PDF 512Kx8 32-pin 32-pin AS29F040-55TC AS29F040-5SLC AS29F040-70TC AS29F040-70TI AS29F040-70LC .5555b S29F040 tl4000 29F040-120