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    S4C256K Search Results

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    S4C256K Price and Stock

    Alliance Memory Inc AS4C256K16E0-35TC

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    Bristol Electronics AS4C256K16E0-35TC 870 1
    • 1 $15
    • 10 $10.125
    • 100 $8.625
    • 1000 $8.625
    • 10000 $8.625
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    Alliance Semiconductor Corporation AS4C256K16F0-60JCTR

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    Bristol Electronics AS4C256K16F0-60JCTR 444 1
    • 1 $9.828
    • 10 $4.914
    • 100 $4.2585
    • 1000 $4.0295
    • 10000 $4.0295
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    Alliance Semiconductor Corporation AS4C256K16E0-60JC

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    Bristol Electronics AS4C256K16E0-60JC 118
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    Alliance Semiconductor Corporation AS4C256K16FO-60JC

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    Bristol Electronics AS4C256K16FO-60JC 15
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    Alliance Memory Inc AS4C256K16EO-50JC

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    Bristol Electronics AS4C256K16EO-50JC 8
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    S4C256K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AS4C256K16F0-60JC

    Abstract: 1j30 AS4C256K16F0 AS4C256K16F0-60 1J3000
    Text: H ig h P e rfo rm a n c e 256K.X 16 CMOS DRAM H A S4C256K 16F0 A H ia h Speed 2 5 6 K X 1 6 CMOS DRAM F a st p a g e m ode Prelim inary information features • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I/O • JEDEC sta n d a rd packages


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    PDF AS4C256K16F0 4C256K16F0-50) 40-pin 40/44-pin 40-pin AS4C256K16F0-S0JC AS4C256K16F0-60JC 40/44-pin AS4C256K16F0-50TC l-30002-a. AS4C256K16F0-60JC 1j30 AS4C256K16F0 AS4C256K16F0-60 1J3000

    Untitled

    Abstract: No abstract text available
    Text: S4C256K16E0 5V 256Kx 16 CMOS DRAM EDO Features • Refresh - 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only o r CAS-before-RAS refresh o r self-refresh - Self-refresh o p tio n is available for n e w g en eratio n device • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits


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    PDF AS4C256K16E0 256Kx AS4C256K16E0-25) S4C256K16E0-30JC S4C256K16E0-35JC AS4C256K16E0-50JC S4C256K16E0-50TC

    6E025

    Abstract: No abstract text available
    Text: Features • Refresh • O rganization: 262,144 w o rd s x 16 bits - 512 refresh cycles, 8 ms refresh interval • H ig h speed - 2 5 / 3 0 / 3 5 / 5 0 ns R A S access tim e - RA S-only o r CAS-before-RAS refresh o r self-refresh - 1 2 /1 6 /1 8 /2 5 ns co lu m n address access tim e


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    PDF 40-pin 40/44-pin 6E0-25JC S4C256K 16E0-30JC 256K1 6E0-35JC 16E0-50JC 6E025

    Untitled

    Abstract: No abstract text available
    Text: Il High Performance 256Kxl6 CMOS DRAM S4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY I F E A TU R E S_ • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh


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    PDF 256Kxl6 AS4C256K16F0 256Kxl6 40-pin 4C256K16F0-50) AS4C256K 16F0-50JC 40-pin AS4C256K16F0-60JC 256K16

    AS4C256K16E0-60JC

    Abstract: as4c256k16eo 12 SQ 045 JF 256KX16 AS4C256K16E0
    Text: H ig h P e r fo r m a n c e 256K X 16 CMOS DRAM gg A S4C 256K 16E 0 II H iah speed 2 5 6 K x l6 CMOS DRAM EDO Preliminary information Features • 5 1 2 r e f r e s h c y c le s, 8 m s r e f r e s h in te rv a l • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its


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    PDF AS4C256K16E0 256KX16 256Kxl6 4C256K16E0-50) 40-pin 40/44-pin I/015 AS4C256K16E0-30JC AS4C256K16E0-35JC AS4C256K16E0-60JC as4c256k16eo 12 SQ 045 JF AS4C256K16E0

    AS4C256K16F0-60JC

    Abstract: sem 2105 16 pin
    Text: Preliminary information Features • R e a d -m o d ify -w r ite • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s b y 16 b its • T T L ~ com p atib le, th r e e -s ta te 1 / O • H ig h s p e e d • JEDEC stan d ard p a ck a g es - 5 0 / 6 0 ns RAS access tim e


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    PDF 40-pin 44-pin AS4C256K16F0-50JC AS4C2S6K16F0-50TC AS4C256K16F0-60JC AS4C256K16F0-60JC sem 2105 16 pin

    L30001

    Abstract: D1130
    Text: r H igh Performance 256K X 16 CMOS DRAM gg A S 4C 256K 16E 0 II H igh Speed 2 5 6 K x l6 CMOS DRAM E D O Preliminary Features • 5 1 2 refresh cycles, 8 m s refresh interval • O rganization: 2 6 2 ,1 4 4 w o rd s b y 16 bits • H igh speed - RAS-only o r CAS-before-RAS refresh


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    PDF l-30001-* 10G3H4, L30001 D1130