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    Analog Devices Inc HMC476SC70TR

    IC RF AMP WIMAX 0HZ-6GHZ SC70-6
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    Analog Devices Inc HMC311SC70TR

    IC RF AMP WLAN 0HZ-8GHZ SC70-6
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    Analog Devices Inc HMC474SC70TR

    SiGe HBT Gain Block amp SMT, D
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    Analog Devices Inc HMC474SC70TR 1,000 500
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    Brilliance Semiconductor Inc BS62LV2565SC-70TR

    INSTOCK
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    Chip 1 Exchange BS62LV2565SC-70TR 33,000
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    SC70T Datasheets Context Search

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    SC70t

    Abstract: l 0713
    Text: Package Information Vishay Siliconix CASE OUTLINE for PowerPAK SC70T D A Terminal #1 b e b Pin 1 T Pin 1 D3 D2 D2 E2 E2 E2 K E3 K4 E4 Pin 2 D2 C A1 K K Topside View e Pin 3 L Pin 2 L E Pin 3 A Pin 4 Pin 5 Pin 6 K3 K2 K1 Z MILLIMETERS NOM. MAX. 0.60 0.65


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    PDF SC70T C09-0671-Rev. 07-SepILLIMETERS 07-Sep-09 SC70t l 0713

    65370

    Abstract: No abstract text available
    Text: Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single


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    PDF SC70T C12-0160-Rev. 05-Mar-12 05-Mar-12 65370

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA444DJT SC-70-6L-Single SC-70 2002/95/EC SiA444DJT-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: LMH7220 www.ti.com SNOSAL3D – SEPTEMBER 2006 – REVISED MAY 2008 LMH7220 High Speed Comparator with LVDS Output Check for Samples: LMH7220 FEATURES DESCRIPTION • The LMH7220 is a high speed, low power comparator with an operating supply voltage range of 2.7V to


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    PDF LMH7220 LMH7220

    PIN-RD100

    Abstract: No abstract text available
    Text: LMH6601 www.ti.com SNOSAK9D – JUNE 2006 – REVISED OCTOBER 2009 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high speed voltage feedback operational amplifier suitable


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    PDF LMH6601 LMH6601/LMH6601Q LMH6601Q AEC-Q100 LMH6601 PIN-RD100

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: LMH6601, LMH6601-Q1 www.ti.com SNOSAK9E – JUNE 2006 – REVISED MARCH 2013 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601, LMH6601-Q1 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high


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    PDF LMH6601, LMH6601-Q1 LMH6601/LMH6601Q LMH6601

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 4.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA444DJT SC-70 2002/95/EC SC-70-6L-Single SiA444DJT-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


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    PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA907EDJT SC-70 2002/95/EC SC-70-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


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    PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA444DJT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • New thermally enhanced PowerPAK® SC-70


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    PDF SiA444DJT SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA444DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    0.1Hz+to+10Hz+noise

    Abstract: No abstract text available
    Text: Arthur Kay TI Precision Designs: Verified Design 0.1Hz to 10Hz Noise Filter TI Precision Designs Circuit Description TI Precision Designs are analog solutions created by TI’s analog experts. Verified Designs offer the theory, component selection, simulation, complete PCB


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    PDF ISO/TS16949 ISO/TS16949. 0.1Hz+to+10Hz+noise

    Untitled

    Abstract: No abstract text available
    Text: User Guide for FEBFHR1200_SPG01A Evaluation Board High-Performance Shunt Regulator Featured Fairchild Product: FHR1200 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2014 Fairchild Semiconductor Corporation


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    PDF FEBFHR1200 SPG01A FHR1200

    Untitled

    Abstract: No abstract text available
    Text: SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.057 at VGS = -4.5 V -4.5 a 0.095 at VGS = -2.5 V -4.5 a Qg (TYP.) 4.9 nC PowerPAK SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® power MOSFET


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    PDF SiA907EDJT SC-70-6L SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


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    PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original
    PDF SiA429DJT SC-70 2002/95/EC SC-70-6L-Single 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF SiA444DJT SC-70 2002/95/EC SC-70-6L-Single 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: LMH6601, LMH6601-Q1 www.ti.com SNOSAK9E – JUNE 2006 – REVISED MARCH 2013 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601, LMH6601-Q1 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high


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    PDF LMH6601, LMH6601-Q1 LMH6601/LMH6601Q LMH6601Q AEC-Q100 LMH6601

    Untitled

    Abstract: No abstract text available
    Text: SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) b, c 0.0135 at VGS = 10 V 12 a 0.0185 at VGS = 4.5 V 10.8 • TrenchFET power MOSFET Qg (Typ.) • Thermally enhanced PowerPAK® SC-70 package


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    PDF SiA430DJT SC-70 SC-70-6L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12