Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
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PDF
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SN54ABT861
Abstract: SN74ABT861
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
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SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
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Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
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PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
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PDF
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SN54ABT861
Abstract: SN74ABT861
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
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PDF
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SN54ABT861
Abstract: SN74ABT861 SN74ABT861DW
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN54ABT861
SN74ABT861
SN74ABT861DW
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PDF
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Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
SN74ABT861
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PDF
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|
|
Untitled
Abstract: No abstract text available
Text: SN54ABT861, SN74ABT861 10-BIT TRANSCEIVERS WITH 3-STATE OUTPUTS SCBS199C – FEBRUARY 1991 – REVISED MAY 1997 D D D D D D State-of-the-Art EPIC-ΙΙB BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V
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Original
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SN54ABT861,
SN74ABT861
10-BIT
SCBS199C
MIL-STD-883,
JESD-17
32-mA
64-mA
SN54ABT861
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PDF
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FT 4013 d dual flip flop
Abstract: FT 4013 D flip flop 74HC octal bidirectional latch 74HCT 4013 DATASHEET 4511 pin configuration SN7432 fairchild CMOS TTL Logic Family Specifications 7805 acv Datasheet of decade counter CD 4017 sn74154
Text: T H E W O R L D L E A D E R I N L O G I C P R O D U C T S Logic Selection Guide February 2000 1999 EEProduct News PRODUCTS OF THE YEAR AWARD New products for prototype design AVC Advanced Very-Low-Voltage CMOS Logic See Section 4 LOGIC OVERVIEW 1 FUNCTIONAL INDEX
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transistor fn 1016
Abstract: SN74HC1G00 SCAD001D sn74154 SN74ALVC1G32 JK flip flop IC SDFD001B philips 18504 FB 3306 CMOS Data Book Texas Instruments Incorporated
Text: W O R L D L Logic Selection Guide August 1998 E A D E R I N L O G I C P R O D U C T S LOGIC OVERVIEW 1 FUNCTIONAL INDEX 2 FUNCTIONAL CROSSĆREFERENCE 3 DEVICE SELECTION GUIDE 4 3 LOGIC SELECTION GUIDE AUGUST 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or
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T flip flop IC
Abstract: pin designation for CD40110B IC 74LS series logic gates 3 input or gate FT 4013 d dual flip flop ic cmos 4011 CD4001* using NAND gates IC CD 4033 pin configuration Quad 2 input nand gate cd 4093 FT 4013 D flip flop 74HCT 4013 DATASHEET
Text: T H E W O R L D L E A D E R I N L O G I C P R O D U C T S Logic Selection Guide February 2000 1999 EEProduct News PRODUCTS OF THE YEAR AWARD New products for prototype design AVC Advanced Very-Low-Voltage CMOS Logic See Section 4 LOGIC OVERVIEW 1 FUNCTIONAL INDEX
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