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    SD2933 Search Results

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    SD2933 Price and Stock

    STMicroelectronics SD2933

    RF MOSFET 50V M177
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    DigiKey SD2933 Tray 50
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    STMicroelectronics SD2933W

    RF MOSFET 50V M177
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    DigiKey SD2933W Tray 1
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    Mouser Electronics SD2933W 63
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    Verical SD2933W 1,788 1
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    Arrow Electronics SD2933W 1,788 28 Weeks 1
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    STMicroelectronics SD2933W 63 1
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    EBV Elektronik SD2933W 29 Weeks 25
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    STMicroelectronics SD2933-03

    RF MOSFET 50V M177
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    DigiKey SD2933-03 Tray 50
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    STMicroelectronics SD2933-03W

    RF MOSFET M177
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    DigiKey SD2933-03W Tray 50
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    Avnet Americas SD2933-03W Box 28 Weeks 50
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    Mouser Electronics SD2933-03W
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    Advanced Semiconductor Inc SD2933

    RF MOSFET Transistors RF Transistor
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    Mouser Electronics SD2933
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    SD2933 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SD2933 STMicroelectronics RF POWER TRANSISTORS HF-VHF-UHF N-CHANNEL MOSFETS Original PDF
    SD2933 STMicroelectronics RF POWER TRANSISTORS HF-VHF-UHF N-CHANNEL MOSFETs Original PDF
    SD2933 STMicroelectronics RF Power Transistor HF/VHF/UHF N-Channel MOSFET Original PDF
    SD2933 STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH HF/VHF/UHF M177 Original PDF
    SD2933W STMicroelectronics RF FETs, Discrete Semiconductor Products, IC TRANS RF HF/VHF/UHF Original PDF

    SD2933 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD2933

    Abstract: 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 200B 700B M177

    sc1430

    Abstract: 100870
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 sc1430 100870

    2933

    Abstract: 300WPEP amplifier 400W 10w 900MA DB-2933-54 JESD97 M177 SD2933
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original
    PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54 2933 amplifier 400W 10w 900MA JESD97 M177 SD2933

    Untitled

    Abstract: No abstract text available
    Text: , U na. t/ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization • Excellent thermal stability • Common source configuration


    Original
    PDF SD2933 SD2933

    SD2933

    Abstract: free transistor bs 200 M177 DB-2933-54 2933 JESD97 300WPEP 300w class ab amplifier m174 0400X0
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original
    PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54 SD2933 free transistor bs 200 M177 2933 JESD97 300w class ab amplifier m174 0400X0

    SD2933

    Abstract: M177 STEVAL-TDR004V1 STEVAL-TDR00 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original
    PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 M177 STEVAL-TDR00 NI 100

    resistor 560 ohm

    Abstract: SD2933
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original
    PDF SD2933 SD2933 resistor 560 ohm

    SD2933

    Abstract: M177 MOROCCO B 108 B
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING M177 DESCRIPTION The SD2933 is a gold metallized N-Channel MOS


    Original
    PDF SD2933 SD2933 M177 MOROCCO B 108 B

    SD2933-05

    Abstract: m174 SD2933 200B 700B M177
    Text: SD2933-05 RF power transistor HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original
    PDF SD2933-05 SD2933-05 m174 SD2933 200B 700B M177

    resistor 560 ohm

    Abstract: sc1430 SD2933 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 resistor 560 ohm sc1430 200B 700B M177

    SD2933W

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original
    PDF SD2933 SD2933 SD2933W SD2933W

    sc1430

    Abstract: 2896 80c
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 sc1430 2896 80c

    resistor 560 ohm

    Abstract: SD2933 sc1430 200B 700B M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 resistor 560 ohm sc1430 200B 700B M177

    Untitled

    Abstract: No abstract text available
    Text: DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 1.6 - 54MHz ■ Supply voltage: 48V ■ Output power: 400W typ. ■ Input power 10W max. ■ Efficiency: 57% - 76%


    Original
    PDF DB-2933-54 SD2933 54MHz 300WPEP -26dBc DB-2933-54

    2L TRANSISTOR

    Abstract: 14981 STEVAL-TDR004V1 austerlitz M177 SD2933 Ni100 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original
    PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 2L TRANSISTOR 14981 austerlitz M177 Ni100 NI 100

    resistor 560 ohm

    Abstract: SD2933 2896 80c sc1430
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 resistor 560 ohm 2896 80c sc1430

    SD2933

    Abstract: 2896 80c resistor 560 ohm M177
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 2896 80c resistor 560 ohm M177

    resistor 560 ohm

    Abstract: No abstract text available
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933 resistor 560 ohm

    sd2931 fm

    Abstract: SD2933 SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
    Text: AN1256 Application note High-power RF MOSFET targets VHF applications Introduction The SD2933, which utilizes a double-diffused metal oxide DMOS semiconductor technology, is the latest addition to STMicroelectronics’ RF Power MOSFET family. The packaged version is shown in Figure 1. The SD2933 is a single-ended, 50 V, 300 W, gold


    Original
    PDF AN1256 SD2933, SD2933 sd2931 fm SD2931-10 AN1256 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    austerlitz

    Abstract: SD2933 2L TRANSISTOR M177 STEVAL-TDR00 NI 100
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original
    PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1 austerlitz 2L TRANSISTOR M177 STEVAL-TDR00 NI 100

    Untitled

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original
    PDF SD2933 SD2933

    Untitled

    Abstract: No abstract text available
    Text: SD2933 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • GOLD METALLIZATION • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 300 W MIN. WITH 20 dB GAIN @ 30 MHz • THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original
    PDF SD2933 SD2933

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR004V1 RF power amplifier demonstration board using two SD2933 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 1.6 - 54 MHz ■ Supply voltage: 48 V ■ Output power: 400 W typ. ■ Input power 10 W max.


    Original
    PDF STEVAL-TDR004V1 SD2933 STEVAL-TDR004V1

    SD2942

    Abstract: PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933
    Text: Radio frequency technologies for innovative solutions Selection guide March 2008 www.st.com/rf DMOS ISM & FM broadcast applications Part number SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2943 STAC2932B * SD3931-10 SD3932


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    PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933