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SEMIX302GB12E4S Price and Stock

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SEMIKRON SEMIX302GB12E4S Igbt Module, Dual, 1.2Kv, 463A; Continuous Collector Current:463A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX302GB12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX302GB12E4S	Bulk			6	1 - 10 $151.98 100 $138.95 1000 $138.95 10000 $138.95	Buy Now
Richardson RFPD	SEMIX302GB12E4S				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SEMIX302GB12E4S 27890120 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX302GB12E4S 27890120				1	1 $452.69 10 $357.17 100 $321.87 1000 $321.87 10000 $321.87	Get Quote

SEMIX302GB12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX302GB12E4s SEMiX302GB12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX302GB12E4s E63532	PDF
SEMiX302GB12E4s Abstract: No abstract text available Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX302GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX302GB12E4s E63532 SEMiX302GB12E4s	PDF
SEMiX302GB12E4s Abstract: SEMIX302GB12 Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX302GB12E4s E63532 SEMiX302GB12E4s SEMIX302GB12	PDF
K 250 diode Abstract: No abstract text available Text: SEMiX302GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 463 A Tc = 80 °C 356 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX302GB12E4s E63532 K 250 diode	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF