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SEMIX404GB12E4S Price and Stock

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SEMIKRON SEMIX404GB12E4S Igbt Module, Dual, 1.2Kv, 618A; Continuous Collector Current:618A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX404GB12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX404GB12E4S	Bulk			4	1 $229.9 10 $223.47 100 $210.61 1000 $210.61 10000 $210.61	Buy Now
SEMIKRON SEMIX404GB12E4S 27890170 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 400A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX404GB12E4S 27890170				1	1 $682.6 10 $502.97 100 $467.04 1000 $467.04 10000 $467.04	Get Quote

SEMIX404GB12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX404GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	PDF	SEMiX404GB12E4s E63532
Untitled Abstract: No abstract text available Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX404GB12E4s E63532
SEMiX404GB12E4s Abstract: No abstract text available Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX404GB12E4s E63532 SEMiX404GB12E4s
Untitled Abstract: No abstract text available Text: SEMiX404GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 3xICnom 1200 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SEMiX404GB12E4s E63532 ApplMiX404GB12E4s
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	PDF	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1