SG1000GXH26 Search Results

SG1000GXH26 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SG1000GXH26		Toshiba	INVERTER APPLICATION		Scan	PDF

SG1000GXH26 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
snubber diode Abstract: SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G Text: 8. SELECTION GUIDE FOR GTO, FREE WHEELING DIODE AND SNUBBER DIODE GTO SNUBBER DIODE FREE WHEELING DIODE SG600GXH26 100GXHH21 100FXFG/H11 or 100GXHH2I SG800W24 200EXG/H11 100EXG/H11 SG1000GXH26 100GXHH21 100FXFG/H11 or 100GXHH21 SG1200EX24 300EXH21 100EXG/H11	OCR Scan	SG600GXH26 SG800W24 SG1000GXH26 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2000GXH26 SG2200GXH24 SG2500EX24 snubber diode SG2500GX gto sg3000gxh24 SG3000GXH24 free diode 1000GXHH22 800EXH21 SG3000GXH 100GXHH21 SG4000GXH26G	PDF
100EXG11 Abstract: 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v Text: SELECTION GUIDE — Asymmetrical Type GTO Peak Off-State Voltage 1300V 1600V 1800V 2500V 3300V 800A SG800R24 SG800U24 6000V SG800W24 SG1000GXH26 1000A 1200A SG1200EX24 1500A SG1500EX24 2000A 4500V SG600GXH26 600A SG2000R24 SG2000U24 SG2000W24 SG2000EX24 SG2000EX26	OCR Scan	SG2500EX24 SG3000EX24 SG4000EX26 SG2000R24 SG2000U24 SG2000W24 SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 100EXG11 500EXH21 200FXG12 200FXH12 800GXHH21 gto 200A 100exh gto 300A 100GXHH21 4500v	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL SG 1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX- 4500V I T ( R M S ) = 500A Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current	OCR Scan	SG1000GXH26) 1000GXH26 43MAX- SG1000GXH26 SG1Q0QGXH26-4*	PDF
Gate Turn-off Thyristor Abstract: thyristor 1000A Text: TOSHIBA GATE TURN-OFF THYRISTOR SG1000GXH26 LO W SN UBBER TYPE SG1000GXH26 SGIOOOGXH26 Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S. On-State Current : lT(RMS) = 500A Peak Turn-Off Current	OCR Scan	SG1000GXH26 SGIOOOGXH26) SG1000GXH26 00A//ws Gate Turn-off Thyristor thyristor 1000A	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA SG1000GXH26 Unit in mm Inverter Application • Repetitive Peak Off-State Voltage: VDRM = 4500V • R.M.S. On-State Current: h RMS = -<2! 500A • Peak Turn-Off Current: 't g q m = 1 0 0 0 A • Critical Rate of Rise of On-State Current: d i/d t = 600A/JIS	OCR Scan	SG1000GXH26 00A/JIS 10OOV/	PDF
SG1000GXH26 Abstract: No abstract text available Text: T O S H IB A SG1000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX. VDRM = 4500 V lT RMS = 500 A :TGQM = !000 A d i/d t = 600 A / jus dv / dt = 1000 V / jus Ü M AXIM UM RATINGS SYMBOL RATING CHARACTERISTIC	OCR Scan	SG1000GXH26 SG1000GXH26	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL SG1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current	OCR Scan	SG1000GXH26 SG1000GXH26J 500AlTGQM= 13-75B1A SG1000GXH26) -500m SG1000GXH26	PDF
500EXH21 Abstract: 100gxhh21 SG3000GXH24 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX SG800GXH24 Text: G TOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG" while all reverse conducting types are marked with “SGR.” All devices ending with “26” are “Fine-pattern" devices that	OCR Scan	SG1200EX24 SG1500EX24 SG2000EX24 SG2200GXH24 SG3000EX24 SG3000GXH24 SG3000JX24 SG2000GXH26 SG800GXH24 SG1000GXH26 500EXH21 100gxhh21 800A 75m gate turn off thyristors TOSHIBA 100GXHH21 800GXHH21 800GX	PDF
gate turn off thyristors Abstract: 500EXH21 800gxhh21 800exh21 Text: GTOs and Fast Recovery Diodes Gate Turn Off Thyristors GTOs Toshiba produces a wide variety of “Alloy-free” GTOs. All anode short types are indicated by prefix “SG” while all reverse conducting types are marked with “SGR." All devices ending with “26” are “Fine-pattern” devices that	OCR Scan	1SG1200EX24 SG1500EX24 SG2000EX24 SG2000EX26 SG2200GXH24 SG3000EX24 SGR3000EX26 SG4000EX26 SGR3000GXH26 SG4000GXH26 gate turn off thyristors 500EXH21 800gxhh21 800exh21	PDF