G10TC15M
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n OUTLI NE SG10TC15M Uni t mm Package FTO220G 3pi n 150V10A ロット記号 （例） Date code 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G10TC15M ３.45 Tj = I A R= µ 15.０ 管理番号 （例） Control No. 13.5
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G10TC15M
G10TC15M
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G10TC15M
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG10TC15M OUTLI NE Package：FTO220G pi n） （3 150V10A ロット記号 （例） Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G10TC15M ３.45 煙 Tj =１７ ５℃ 煙低 I １５µA
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G10TC15M
G10TC15M
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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D 92 M 03 DIODE
Abstract: D 92 M - 03 DIODE marking WM diode
Text: Schottky Barrier Diode Twin Diode mtmm o u t lin e S G 10T C 1 5 M 150 V 10A Feature • Tj=175°C • Tj=175°C • 7 J b = E -J b K •ÎS I r=15|jA • Full Molded • Low Ir=15|jA • Resistance for thermal run-away Main Use • y -h P C .L C D Ç -^ i
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OCR Scan
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J533-1)
SG10TC15M
50IIz
D 92 M 03 DIODE
D 92 M - 03 DIODE
marking WM diode
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10TC15M
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FT0220G S G 10T C 1 5 M Unit : mm Weight 1.54g Typ 4.5 150 V 10A Feature >Tj=150°C ' Tj=150°C ><SIr=15m A 1 Low Ir=15|jA 1 Resistance for thermal run-away >37JLÆ-JL/ K ' Full Molded L IC < 1 1
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OCR Scan
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FT0220G
J533-1)
SG10TC15M
50IIz
10TC15M
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 10T C 1 5 M Unit : mm Package I FTO-220G Weight J.54g Typ 150 V 10 A 4.5 Feature • Tj=i5(rc • • • • • • 7 J IÆ -J U K • e i R = i5 MA • j r iiìè s b c u c < u • « « M S 2kVßfiE Tj=150°C
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OCR Scan
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FTO-220G
J533-1
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SG10TC15M
Abstract: D 92 M - 02 DIODE c 92 M - 02 DIODE
Text: Schottky Barrier Diode Twin Diode • fl- tlH S G 10T C 1 5 M OUTLINE Unit: mm Package : FTO-220G Weight L54g Typ n?hSE»(09) 15 0 V 10A 4.5 Feature • Tj=1751C • Tj=175°C • Full Molded • I r=15|jA • Lo w Ir=15^ iA • Resistance for thermal run-away
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OCR Scan
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SG10TC15M
FTO-220G
i50HzT
CJ533-1
SG10TC15M
D 92 M - 02 DIODE
c 92 M - 02 DIODE
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marking JC diode
Abstract: SG10TC15M
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE S G 10T C 1 5 M 150 V I 0A Feature • Tj=175°C • Full Molded • Tj=175°C • Lo w Ir=15| j A • I 5 I r =15|j A • • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • IgiUÎŒ 2kVffilŒ
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OCR Scan
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SG10TC15M
FTO-220G
i50HzT
CJ533-1
marking JC diode
SG10TC15M
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