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    TMS626802

    Abstract: SDRAM 1994 Texas Instruments
    Text: i m gv^uuvci 1 048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS182B - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses)


    OCR Scan     		1048576-WORD SMOS182B 100-MHz SMOS182B- R-PDSO-G44) TMS626802 SDRAM 1994 Texas Instruments PDF

    TMS626802

    Abstract: SDRAM 1994 Texas Instruments 211-ER 62680
    Text: TMS626802 1048576-WORD BY 8-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS1826 - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 1M x 8 x 2 Banks 3.3-V Power Supply ±10% Tolerance Two Banks for On-Chip Interleaving (Gapless Accesses) High Bandwidth - Up to 100-MHz Data


    OCR Scan     		TMS626802 1048576-WORD SMOS1826 100-MHz SMOS182B- R-PDSO-G44) TMS626802 SDRAM 1994 Texas Instruments 211-ER 62680 PDF