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    SPP11N60S5 Price and Stock

    Infineon Technologies AG SPP11N60S5HKSA1

    MOSFET N-CH 650V 11A TO220-3
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    DigiKey SPP11N60S5HKSA1 Tube 500
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    Infineon Technologies AG SPP11N60S5XKSA1

    LOW POWER_LEGACY
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    Infineon Technologies AG SPP11N60S5

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    Bristol Electronics SPP11N60S5 140 2
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    Quest Components SPP11N60S5 112
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    SPP11N60S5 76
    • 1 $3.4788
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    ComSIT USA SPP11N60S5 78
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    SPP11N60S5 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPP11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.38 ?, 11.0A Original PDF
    SPP11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPP11N60S5HKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-220AB Original PDF
    SPP11N60S5XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY Original PDF

    SPP11N60S5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760

    11N60S5

    Abstract: 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38 Ω • Optimized capacitances


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 11N60S5 equivalent TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 TRANSISTOR SMD 2X y Q67040-S4338 TRANSISTOR 11n60s5

    11n60s

    Abstract: 11n60 SMD CASE footprint
    Text: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		PDF SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint

    Untitled

    Abstract: No abstract text available
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO262 VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 P-TO220-3-1

    11N60S5

    Abstract: SPI11N60S5 SPP11N60S5
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 11N60S5 SPI11N60S5 SPP11N60S5

    11N60S5 equivalent

    Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
    Text: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 20TP SPI11N60S5 SPP11N60S5 AR06

    Untitled

    Abstract: No abstract text available
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.38 Ω ID 11 A • Ultra low gate charge PG-TO262 • Periodic avalanche rated PG-TO220 2 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5

    11n60s5

    Abstract: No abstract text available
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262-3 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262-3 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262-3 11n60s5

    Untitled

    Abstract: No abstract text available
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 P-TO220-3-1 PG-TO262 PG-TO220-3-1 SPI11N60S5 PG-TO220-3-1 Q67040-S4198 PG-TO262

    Untitled

    Abstract: No abstract text available
    Text: SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original     		PDF SPP11N60S5 SPI11N60S5 PG-TO262 PG-TO220 P-TO220-3-1 Q67040-S4198 11N60S5

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
    Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original     		PDF SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5

    11N60S5

    Abstract: SPB11N60S5 SPP11N60S5
    Text: SPP11N60S5 SPB11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 SPB11N60S5

    TRANSISTOR SMD MARKING CODE 7A

    Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO-263-3-2 20TP
    Text: SPP11N60S5, SPB11N60S5 SPI11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		PDF SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO-263-3-2 20TP

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Text: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original     		PDF

    diode BYW 64

    Abstract: B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822
    Text: Monitor -IC Nr 1 2 3 4 5 6 7 8 9 10 11 12 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 Name BR1 C11 C12 C13 C14 C15 C21 C22 C23 C24 C25 C26 C27 C31 C32 C33 C34 C35 C36 C37 C38 C39 C41 C42 C43 C44 C51 C52 C53 C54 C61 C62


    Original     		PDF B250C5000/3300 F/250V 3nF/250V F/400V 47nF/400V F/50V F/63V F/100V diode BYW 64 B81121 X2 mkt TDB7812T B81121 B32530 1nf 100v mkt 100v mkt b81121 x2 7812T B41822

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original     		PDF AN-CoolMOS-07 Room14J1 Room1101 AN-CoolMOS-01 AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5

    SPF47283900

    Abstract: diode 2b 0536
    Text: NCP1601A, NCP1601B Compact Fixed Frequency Discontinuous or Critical Conduction Voltage Mode Power Factor Correction Controller The NCP1601 is a controller designed for Power Factor Correction PFC boost circuits. The device operates in fixed−frequency


    Original     		PDF NCP1601A, NCP1601B NCP1601 NCP1601B NCP1601B) SPF47283900 diode 2b 0536

    NCP1601APG

    Abstract: No abstract text available
    Text: NCP1601A, NCP1601B Compact Fixed Frequency Discontinuous or Critical Conduction Voltage Mode Power Factor Correction Controller http://onsemi.com The NCP1601 is a controller designed for Power Factor Correction PFC boost circuits. The device operates in fixed−frequency


    Original     		PDF NCP1601A, NCP1601B NCP1601 NCP1601A/D NCP1601APG

    bc369 equivalent

    Abstract: cms capacitor etd39 ferrite core etd39 core type smps full bridge transformer design etd39 core type smps transformer design NCP1605 bc368 equivalent Epcos Ferrite Core Data book 2007 SFH615A substitution CGS SBCHE4
    Text: AND8281/D Implementing the NCP1605 to Drive the PFC Stage of a 19 V / 8 A Power Supply Prepared by: Joel Turchi ON Semiconductor http://onsemi.com APPLICATION NOTE Forward or half−bridge converters take a significant advantage of a narrow input voltage range. In such


    Original     		PDF AND8281/D NCP1605 NCP1605 bc369 equivalent cms capacitor etd39 ferrite core etd39 core type smps full bridge transformer design etd39 core type smps transformer design bc368 equivalent Epcos Ferrite Core Data book 2007 SFH615A substitution CGS SBCHE4

    SPF47283900

    Abstract: JESD78 KBP06 MUR460 NCP1601 NCP1601A NCP1601B SPP11N60S5 digital pfc crm
    Text: NCP1601A, NCP1601B Compact Fixed Frequency Discontinuous or Critical Conduction Voltage Mode Power Factor Correction Controller http://onsemi.com The NCP1601 is a controller designed for Power Factor Correction PFC boost circuits. The device operates in fixed−frequency


    Original     		PDF NCP1601A, NCP1601B NCP1601 NCP1601A/D SPF47283900 JESD78 KBP06 MUR460 NCP1601A NCP1601B SPP11N60S5 digital pfc crm

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    6 PIN SMD IC FOR SMPS

    Abstract: 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet
    Text: Version 1.1 February 2001 Application Note AN-CoolMOS-03 HOW TO SELECT THE RIGHT COOLMOS AND ITS POWER HANDLING CAPABILITY Author: Luo Junyang, Jeoh Meng Kiat, Marco Puerschel and Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion


    Original     		PDF AN-CoolMOS-03 Room14J1 Room1101 6 PIN SMD IC FOR SMPS 500 Watt Phase Shifted ZVT Power Converter smps* ZVT infineon mtbf mtbf siemens 3800 CoolMOS Power Transistor circuit diagram of mosfet based smps power supply 500 WATT smps technical difference between 400 watt smps and 45 110 volt output smps design datasheet

    Untitled

    Abstract: No abstract text available
    Text: SPB11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPB11N60S5 P-TO263-3-2 SPB11N60S5 Q67040-S4199 11N60S5