Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSF2616E Search Results

    SSF2616E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOP-8

    Abstract: SSF2616E
    Text: SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		SSF2616E SSF2616E Rating2000V 330mm 2500rameters) SOP-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		GDSSF2616E SSF2616E SSF2616E PDF

    Mosfet

    Abstract: SSF2616E
    Text: SSF2616E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		SSF2616E SSF2616E SSF261e Mosfet PDF