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    Text: s = 7 SGS-THOMSON ^7# Kl gKLiM(s iO(gS STB9NB65 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE STB9NB 65 V dss RDS(on) Id 650 V < 0 .7 5 Q 9A . TYPICAL R DS(on) = 0.62 Q m EXTREMELY HIGH dv/dt CAPABILITY . . . . 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STB9NB65 O-263