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    STMicroelectronics STGW50H60DF

    IGBT 600V 100A 360W TO247
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    STGW50H60DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW50H60DF STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 360W TO247 Original PDF

    STGW50H60DF Datasheets Context Search

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    AM01504v1

    Abstract: GW50H60DF
    Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode


    Original     		PDF STGW50H60DF O-247 AM01504v1 GW50H60DF

    GW50H60DF

    Abstract: GW50
    Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode


    Original     		PDF STGW50H60DF O-247 GW50H60DF GW50

    Untitled

    Abstract: No abstract text available
    Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Datasheet − production data Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time


    Original     		PDF STGW50H60DF O-247

    GW50H60DF

    Abstract: STGW50H60DF
    Text: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode


    Original     		PDF STGW50H60DF O-247 GW50H60DF STGW50H60DF