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    STN442

    Abstract: STN44 Stanson Technology MOSFET 20V 80A
    Text: 26 STN44 STN442 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF STN4426 STN442 STN4426 STN442 STN44 Stanson Technology MOSFET 20V 80A

    STN442D

    Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
    Text: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE


    Original     		PDF STN442D STN442 STN442D O-252 O-251 0V/20 O-252 O-251 STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley

    Untitled

    Abstract: No abstract text available
    Text: STN442D N Channel Enhancement Mode MOSFET 27.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE


    Original     		PDF STN442D STN442D O-252 O-251 0V/20 O-252 O-251