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    STRH12P10 Search Results

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    STRH12P10 Price and Stock

    STMicroelectronics STRH12P10GY1

    Trans P-CH 100V 12A 3-Pin TO-257AA Carrier T/R - Bulk (Alt: STRH12P10GY1)
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    Avnet Silica STRH12P10GY1 17 Weeks 1
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    STMicroelectronics STRH12P10GYG

    Rad-Hard Power MOSFET P-Channel 100V 12A 265mOhm Gold 3-Pin TO-257AA Through Hole Strip Pack - Bulk (Alt: STRH12P10GYG)
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    STRH12P10 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA

    STRH12P10ESY1

    Abstract: STRH12P10ESY3
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested 1 2 • Hermetic package 3 • 100 krad TID • SEE radiation hardened TO-257AA


    Original     		PDF STRH12P10 O-257AA DocID022337

    STRH12P10GYG

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard 100 V, 12 A P-channel Power MOSFET Datasheet - production data Features VDSS ID RDS on Qg 100V 12 A 265 mΩ 40 nC • Fast switching • 100% avalanche tested • Hermetic package • 100 krad TID • SEE radiation hardened TO-257AA Applications


    Original     		PDF STRH12P10 O-257AA DocID022337 STRH12P10GYG

    JESD97

    Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248
    Text: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH12P10ESY1 STRH12P10ESY3 O-257AA 34Mev/cm JESD97 STRH12P10ESY1 STRH12P10ESY3 MG 5248

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10 Rad-Hard P-channel 100 V, 12 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 12 A TBD TBD • Fast switching ■ 100% avalanche tested 1 ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 2 3 TO-257AA Applications ■ Satellite ■


    Original     		PDF STRH12P10 O-257AA SC06140p STRH12P10GY1 O-257AA