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    Vishay Intertechnologies SUB75N03-04

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    Bristol Electronics SUB75N03-04 390
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    Vishay Siliconix SUB75N03-04

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    Bristol Electronics SUB75N03-04 11
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    Others SUB75N0304

    AVAILABLE EU
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    ComSIT USA SUB75N0304 1,600
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    Vishay Intertechnologies SUB75N0307

    Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA SUB75N0307 15,875
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    SUB75N03 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUB75N03-04 Vishay Intertechnology N-Channel Enhancement-Mode MOSFET, 4-mohm rDS(on) Original PDF
    SUB75N03-04 Vishay Siliconix N-Channel 30-V (D-S), 175°C MOSFET Original PDF
    SUB75N03-04-E3 Vishay Transistor Mosfet N-CH 30V 75A 3TO-263 Original PDF
    SUB75N03-04 SPICE Device Model Vishay N-Channel Enhancement-Mode MOSFET, 4mOhm rDS(on) Original PDF
    SUB75N03-07 Vishay Siliconix MOSFETs Original PDF
    SUB75N03-07 SPICE Device Model Vishay N-Channel 30-V (x-S) MOSFET Original PDF

    SUB75N03 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SUB75N03-04

    Abstract: SUP75N03-04
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 08-Apr-05 SUB75N03-04 SUP75N03-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-04 PDF

    SUB75N03-07

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-07 27-May-98 SUB75N03-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-04 18-Jul-08 PDF

    70745

    Abstract: SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 SUP75N03-04-E3 SUB75N03-04-E3 18-Jul-08 70745 SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-04 S-71520Rev. 13-Aug-07 PDF

    SUB75N03-04

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-04 Vishay Siliconix N-Channel Enhancement-Mode MOSFET, 4-mΩ Ω rDS on CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		SUP/SUB75N03-04 05-Mar-98 SUB75N03-04 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N03-04 Siliconix N-Channel 30-V D-S , 175_C MOSFET New Product Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04


    Original     		SUP/SUB75N03-04 O-220AB SUP75N03-04 SUB75N0304 O-263) O-263 S-57253--Rev. 24-Feb-98 PDF

    70745

    Abstract: No abstract text available
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 S-57253--Rev. 24-Feb-98 70745 PDF

    SUB75N03-07

    Abstract: SUP75N03-07
    Text: SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET


    Original     		SUP/SUB75N03-07 O-220AB O-263 SUB75N03-07 SUP75N03-07 08-Apr-05 SUB75N03-07 SUP75N03-07 PDF

    S0413

    Abstract: SUB75N03-04 SUP75N03-04
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TO-263 G DRAIN connected to TAB DRAIN connected to TAB G D S Top View SUB75N03-04 G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 S-04137--Rev. 18-Jun-01 S0413 SUB75N03-04 SUP75N03-04 PDF

    S6054

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-07 S-60545Rev. 10-Apr-06 S6054 PDF

    75APF

    Abstract: SUP75N03-04
    Text: SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS on Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB SUB75N0304 SUP75N03-04 S-49547--Rev. 02-Feb-98 75APF SUP75N03-04 PDF

    SUB75N03-07

    Abstract: SUP75N03-07
    Text: SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET


    Original     		SUP/SUB75N03-07 O-220AB O-263 SUB75N03-07 SUP75N03-07 18-Jul-08 SUB75N03-07 SUP75N03-07 PDF

    diode 57

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V x-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-07 18-Jul-08 diode 57 PDF

    SUP75N03-07

    Abstract: SUB75N03-07
    Text: SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 75a 0.01 @ VGS = 4.5 V 70 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB75N03-07 Top View N-Channel MOSFET


    Original     		SUP/SUB75N03-07 O-220AB O-263 SUB75N03-07 SUP75N03-07 S-000652--Rev. 27-Mar-00 SUP75N03-07 SUB75N03-07 PDF

    SUP75N03-04

    Abstract: SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3
    Text: SUP/SUB75N03-04 Vishay Siliconix N-Channel 30-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 30 0.004 75a • TrenchFET Power MOSFETs • 175 °C Rated Maximum Junction Temperature Available RoHS* COMPLIANT TO-220AB D TO-263


    Original     		SUP/SUB75N03-04 O-220AB O-263 SUB75N03-04 SUP75N03-04 SUP75N03-04-E3 SUB75N03-04-E3 08-Apr-05 SUP75N03-04 SUB75N03-04 SUB75N03-04-E3 SUP75N03-04-E3 PDF

    v699

    Abstract: No abstract text available
    Text: SPICE Device Model SUP/SUB75N03-07 Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		SUP/SUB75N03-07 18-Jul-08 v699 PDF

    SUP75N03-04

    Abstract: SUB75N03-04 SUB75N03
    Text: SUP/SUB75N03-04 N-Channel Enhancement-Mode MOSFET, 4-mW rDS on Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 30 0.004 75a D TO-220AB TOĆ263 G DRAIN connected to TAB G D S Top View SUB75N03Ć04 DRAIN connected to TAB G D S S Top View SUP75N03-04 N-Channel MOSFET


    Original     		SUP/SUB75N03-04 O-220AB SUB75N0304 SUP75N03-04 S-53900--Rev. 18-Aug-97 SUP75N03-04 SUB75N03-04 SUB75N03 PDF

    SUB75N03-07

    Abstract: Amp. mosfet 1000 watt MIC5162 MIC5162BMM MIC5162YMM MSOP-10 SUD50N02-06
    Text: MIC5162 Micrel, Inc. MIC5162 Dual Regulator Controller For High-Speed Bus Termination General Description Features The MIC5162 is a dual regulator controller designed for highspeed bus termination. It offers a simple, low-cost JEDEC compliant solution for terminating high-speed, low-voltage


    Original     		MIC5162 MIC5162 M9999-092004 SUB75N03-07 Amp. mosfet 1000 watt MIC5162BMM MIC5162YMM MSOP-10 SUD50N02-06 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    eeprom programmer schematic 24c02

    Abstract: dongle diagram flow design marking 113a N CHANNEL MOSFET 10A 1000V 256X8 SMT4004 UV11 st microelectronics cb4 24c02 eeprom programmer circuits SMT4004FC-017
    Text: SMT4004 QUAD TRAKKINGTM POWER SUPPLY MANAGER FEATURES & APPLICATIONS INTRODUCTION • Programmable Softstart, Tracking and Voltage Monitoring Functions • Controls 4 Independent Supplies Down to 0.9V • Programmable Bus-Side and Card-Side UV and OV Thresholds


    Original     		SMT4004 256X8 SMT4004 eeprom programmer schematic 24c02 dongle diagram flow design marking 113a N CHANNEL MOSFET 10A 1000V UV11 st microelectronics cb4 24c02 eeprom programmer circuits SMT4004FC-017 PDF

    Diode BAY 61

    Abstract: irl3803 equivalent Si4425DY equivalent fds6680a equivalent ITF87052SVT1 HUF76132P3 HUF76132S3S HUF76132SK8 HUF76137P3 HUF76139P3
    Text: LC-00011.1 r2 8/24/00 8:23 PM Page 1 www.intersil.com MOSFETs MOSFETs for Computer Desktop, Servers and Workstations Desktop Power Solutions 30V LOGIC LEVEL Part No. Polarity HUF76145P3 N HUF76145S3S N HUF76143P3 N HUF76143S3S N HUF76139P3 N HUF76139S3S N


    Original     		LC-00011 HUF76145P3 HUF76145S3S HUF76143P3 HUF76143S3S HUF76139P3 HUF76139S3S HUF76137P3 HUF76137S3S HUF76132P3 Diode BAY 61 irl3803 equivalent Si4425DY equivalent fds6680a equivalent ITF87052SVT1 HUF76132P3 HUF76132S3S HUF76132SK8 HUF76137P3 HUF76139P3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S


    OCR Scan     		SUP/SUB75N03-07 O-220AB O-263 SUP75N03-07 SUB75N03-07 S-57585-- 15-Jun-98 PDF