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    Vishay Siliconix SI1016CX-T1-GE3

    MOSFET N/P-CH 20V SC89
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    DigiKey SI1016CX-T1-GE3 Digi-Reel 31,142 1
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    Vishay Intertechnologies SI1016CX-T1-GE3

    COMPLEMENTARY N & P-CH 20-V (D-S) MOSFET - Tape and Reel (Alt: SI1016CX-T1-GE3)
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    Mouser Electronics SI1016CX-T1-GE3 85,318
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    Quest Components SI1016CX-T1-GE3 410
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    Vishay BLH SI1016CX-T1-GE3

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    Bristol Electronics SI1016CX-T1-GE3 320 13
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    Others SI1016CXT1GE3

    AVAILABLE EU
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    ComSIT USA SI1016CXT1GE3 6,000
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    Vishay Huntington SI1016CX-T1-GE3

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    Win Source Electronics SI1016CX-T1-GE3 130,230
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    SI1016CX Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1016CX-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V SC89-6 Original PDF

    SI1016CX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX_GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si1016CX AN609, 1333u 4747u 1949m 1247m 28-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1016CX www.vishay.com Vishay Siliconix N- and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches


    Original     		Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si1016CX

    Abstract: si1016x-t1-ge3 SI1016X
    Text: Specification Comparison Vishay Siliconix Si1016CX vs. Si1016X Description: Package: Pin Out: N- and P-Channel 20 V D-S MOSFETs SC-89 Identical Part Number Replacements: Si1016CX-T1-GE3 replaces Si1016X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		Si1016CX Si1016X SC-89 Si1016CX-T1-GE3 Si1016X-T1-GE3 21-Apr-11 PDF

    SI1016CX

    Abstract: sot-563 MOSFET D1 SI-101
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V


    Original     		Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Electrical Specifications Subject to Change LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead 3350p com/LTC3350 PDF

    Sanyo supercapacitors

    Abstract: maxwell balancing
    Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350f Sanyo supercapacitors maxwell balancing PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3350 High Current Supercapacitor Backup Controller and System Monitor Description Features High Efficiency Synchronous Step-Down CC/CV Charging of One to Four Series Supercapacitors n Step-Up Mode in Backup Provides Greater Utilization of Stored Energy in Supercapacitors


    Original     		LTC3350 14-Bit 38-Lead LTC4425 12-Pin 12-Lead com/LTC3350 3350fa PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF