Untitled
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
08-Apr-05
|
PDF
|
Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
18-Jul-08
|
PDF
|
Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
S-03929--Rev.
21-May-01
|
PDF
|
Si1904EDH
Abstract: No abstract text available
Text: SPICE Device Model Si1904EDH Vishay Siliconix N-Channel 25-V D-S MOSFET with Copper Leadframe CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si1904EDH
11-Apr-02
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
S-03502--Rev.
23-Apr-01
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
08-Apr-05
|
PDF
|
Si1904EDH
Abstract: No abstract text available
Text: Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS
|
Original
|
Si1904EDH
SC-70
OT-363
SC-70
S-03929--Rev.
21-May-01
|
PDF
|
Siliconix
Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123
|
Original
|
2N7000
2N7002
2N7002E
2N7002K
2SJ574
2SK3240
BS170
BSH108
BSS123
BSS138
Siliconix
Siliconix mosfet guide
siliconix VN10KM
Power MOSFET Cross Reference Guide
FDC6323L
fdn5618p
2n7002 siliconix
BS170
equivalent of BS170
VN10KM equivalent
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SÌ1904EDH Vishay Siliconix New Product Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY 0 .8 1 0 @ V g s = 4 .5 V 0 .7 3 • TrenchFET Power MOSFETS: 2.5-V Rated • ESD Protected: 1800 V • Thermally Enhanced SC-70 Package 1 .04 @ V Gs = 0.65
|
OCR Scan
|
1904EDH
SC-70
OT-363
SC-70
S-03929--
21-May-01
SM904EDH
|
PDF
|