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    SI2312CDS Price and Stock

    Vishay Siliconix SI2312CDS-T1-GE3

    MOSFET N-CH 20V 6A SOT23-3
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    DigiKey SI2312CDS-T1-GE3 Cut Tape 102,303 1
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    SI2312CDS-T1-GE3 Digi-Reel 102,303 1
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    SI2312CDS-T1-GE3 Reel 102,000 3,000
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    RS SI2312CDS-T1-GE3 Bulk 3,000
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    Quest Components SI2312CDS-T1-GE3 5,588
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    New Advantage Corporation SI2312CDS-T1-GE3 393,000 1
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    Vishay Siliconix SI2312CDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2312CDS-T1-BE3 Cut Tape 4,460 1
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    SI2312CDS-T1-BE3 Digi-Reel 4,460 1
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    SI2312CDS-T1-BE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI2312CDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2312CDS-T1-BE3)
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    Avnet Americas SI2312CDS-T1-BE3 Reel 6,000 17 Weeks 3,000
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    Mouser Electronics SI2312CDS-T1-BE3 64,464
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    Verical SI2312CDS-T1-BE3 3,000 3,000
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    Arrow Electronics SI2312CDS-T1-BE3 3,000 17 Weeks 3,000
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    Newark SI2312CDS-T1-BE3 Bulk 3,000
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    TTI SI2312CDS-T1-BE3 Reel 201,000 3,000
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    EBV Elektronik SI2312CDS-T1-BE3 18 Weeks 3,000
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    Vishay Intertechnologies SI2312CDS-T1-GE3

    N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2312CDS-T1-GE3)
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    Avnet Americas SI2312CDS-T1-GE3 Reel 3,000 8 Weeks 3,000
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    Mouser Electronics SI2312CDS-T1-GE3 30,702
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    Verical SI2312CDS-T1-GE3 18,000 3,000
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    SI2312CDS-T1-GE3 3,000 3,000
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    Arrow Electronics SI2312CDS-T1-GE3 3,000 8 Weeks 3,000
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    Newark SI2312CDS-T1-GE3 Cut Tape 149,206 5
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    SI2312CDS-T1-GE3 Reel 30,000 3,000
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    Bristol Electronics SI2312CDS-T1-GE3 6,108
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    Quest Components SI2312CDS-T1-GE3 11,872
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    SI2312CDS-T1-GE3 152
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    TTI SI2312CDS-T1-GE3 Reel 15,000 3,000
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    TME SI2312CDS-T1-GE3 4,306 1
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    Chip 1 Exchange SI2312CDS-T1-GE3 9,930
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    Avnet Asia SI2312CDS-T1-GE3 10 Weeks 3,000
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    EBV Elektronik SI2312CDS-T1-GE3 9 Weeks 3,000
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    Maritex SI2312CDS-T1-GE3 1,814
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    Vishay BLH SI2312CDS-T1-GE3

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    Bristol Electronics SI2312CDS-T1-GE3 191 9
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    SI2312CDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2312CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SOT-23 Original PDF

    SI2312CDS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si2312CDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    Si2312CDS 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2312CDS www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original
    Si2312CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI2312cDS

    Abstract: AN609
    Text: Si2312CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    Si2312CDS AN609, 02-Mar-10 AN609 PDF

    SI2312CDS

    Abstract: SI2312bDS SI2312BDS-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original
    Si2312CDS Si2312BDS OT-23 Si2312CDS-T1-GE3 Si2312BDS-T1-GE3 PDF

    SI2312cDS

    Abstract: S10-0641-Rev SI2312CDS-T1-GE3
    Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 18-Jul-08 S10-0641-Rev PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2312CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0318 at VGS = 4.5 V 6a 0.0356 at VGS = 2.5 V 6a 0.0414 at VGS = 1.8 V 5.6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    Si2312CDS 2002/95/EC OT-23 Si2312CDS-T1-GE3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_00 Seiko Instruments Inc., 2013 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage


    Original
    S-8367/8368 PDF

    Untitled

    Abstract: No abstract text available
    Text: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_01 Seiko Instruments Inc., 2013-2014 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage


    Original
    S-8367/8368 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    glucose

    Abstract: No abstract text available
    Text: Handheld Electrochemical Blood Glucose Meter Table of Contents DATA INTERFACE, IrDA. 3 DATA INTERFACE, USB. 4


    Original
    Si3812DV 125mOhms CRCW0402 1000h CRCW0603 glucose PDF