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    SI4473BDY Search Results

    SI4473BDY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4473BDY Vishay Siliconix P-Channel 14-V (D-S) MOSFET Original PDF
    SI4473BDY-E3 Vishay Siliconix P-Channel 14-V (D-S) MOSFET Original PDF
    Si4473BDY SPICE Device Model Vishay P-Channel 14-V (D-S) MOSFET Original PDF
    SI4473BDY-T1-E3 Vishay Siliconix P-Channel 14-V (D-S) MOSFET Original PDF

    SI4473BDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    72741

    Abstract: Integrated Circuit 72741 72741 B Si4473BDY
    Text: SPICE Device Model Si4473BDY Vishay Siliconix P-Channel 14-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4473BDY 18-Jul-08 72741 Integrated Circuit 72741 72741 B PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices


    Original
    Si4473BDY Si4473BDY--E3 Si4473BDY-T1--E3 08-Apr-05 PDF

    Si4473BDY

    Abstract: No abstract text available
    Text: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices


    Original
    Si4473BDY Si4473BDY--E3 Si4473BDY-T1--E3 S-32676--Rev. 29-Dec-03 PDF

    72741

    Abstract: 72741 B Integrated Circuit 72741 Si4473BDY
    Text: SPICE Device Model Si4473BDY Vishay Siliconix P-Channel 14-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4473BDY 16-Dec-03 72741 72741 B Integrated Circuit 72741 PDF

    Si4473BDY

    Abstract: Si4473BDY-T1-E3 Si4473DY Si4473DY-T1 Si4473DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4473BDY vs. Si4473DY Description: P-Channel, 14 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4473BDY-T1-E3 Replaces Si4473DY-T1-E3 Si4473BDY-T1-E3 Replaces Si4473DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original
    Si4473BDY Si4473DY Si4473BDY-T1-E3 Si4473DY-T1-E3 Si4473DY-T1 08-Nov-06 PDF

    74103

    Abstract: 74103 datasheet 7916 AN609 Si4473BDY 74103+flip+flop
    Text: Si4473BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4473BDY AN609 02-Sep-05 74103 74103 datasheet 7916 74103+flip+flop PDF

    Si4473BDY

    Abstract: No abstract text available
    Text: Si4473BDY Vishay Siliconix New Product P-Channel 14-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −14 rDS(on) (W) ID (A) 0.011 @ VGS = −4.5 V −13 0.018 @ VGS = −2.5 V −10 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATION D Battery Switch for Portable Devices


    Original
    Si4473BDY Si4473BDY--E3 Si4473BDY-T1--E3 18-Jul-08 PDF