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    Vishay Intertechnologies SI4982DY-T1-E3

    Channel Type:N Channel; Drain Source Voltage Vds N Channel:100V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:2.6A; Continuous Drain Current Id P Channel:-; Drain Source On State Resistance P Channel:- Rohs Compliant: Yes |Vishay SI4982DY-T1-E3
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    Newark SI4982DY-T1-E3 Cut Tape 2,500
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    Vishay Intertechnologies SI4982DY

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    Bristol Electronics SI4982DY 210
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    Vishay Huntington SI4982DY

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    NexGen Digital SI4982DY 59
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    SI4982DY Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4982DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4982DY Vishay Dual N-Channel 100-V (D-S) Rated MOSFET Original PDF
    Si4982DY Vishay Intertechnology Dual N-Channel 100-V (D-S) MOSFET Original PDF
    SI4982DY Vishay Telefunken Dual N-channel 100-v (d-s) Mosfet Original PDF
    Si4982DY SPICE Device Model Vishay Dual N-Channel 100-V (D-S) MOSFET Original PDF
    SI4982DY-T1 Vishay Intertechnology Dual N-Channel 100-V (D-S) MOSFET Original PDF
    SI4982DY-T1 Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET Original PDF

    SI4982DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4982DY

    Abstract: No abstract text available
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4982DY S-54938--Rev. 29-Sep-97

    Si4982DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4982DY 18-Jul-08

    71016

    Abstract: Si4982DY 6VSD
    Text: SPICE Device Model Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4982DY 20-May-02 71016 6VSD

    SI4982DY

    Abstract: No abstract text available
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.150 at VGS = 10 V 2.6 0.180 at VGS = 6 V 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4982DY 2002/95/EC Si4982DY-T1-E3 Si4982DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4982DY

    Abstract: No abstract text available
    Text: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4982DY S-54938--Rev. 29-Sep-97

    Untitled

    Abstract: No abstract text available
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V 2.6 0.180 @ VGS = 6 V 2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S Ordering Information: Si4982DY Si4982DY-T1 (with Tape and Reel)


    Original     		PDF Si4982DY Si4982DY-T1 08-Apr-05

    Si4982DY

    Abstract: No abstract text available
    Text: Si4982DY Siliconix Dual N-Channel 100-V D-S Rated MOSFET New Product Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4982DY Rang100 S-54938--Rev. 29-Sep-97

    Si4982DY

    Abstract: Si4982DY-T1-E3
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.150 at VGS = 10 V 2.6 0.180 at VGS = 6 V 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4982DY 2002/95/EC Si4982DY-T1-E3 Si4982DY-T1-GE3 18-Jul-08

    AN609

    Abstract: Si4982DY
    Text: Si4982DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4982DY AN609 12-Jun-07

    Si4982DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4982DY S-60072Rev. 23-Jan-06

    Si4982DY

    Abstract: No abstract text available
    Text: Si4982DY Dual N-Channel 100-V D-S Rated MOSFET Product Summary VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V "2.6 0.180 @ VGS = 6 V "2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		PDF Si4982DY S-54938--Rev. 29-Sep-97

    Si4982DY

    Abstract: Si4982DY-T1
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V 2.6 0.180 @ VGS = 6 V 2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S Ordering Information: Si4982DY Si4982DY-T1 (with Tape and Reel)


    Original     		PDF Si4982DY Si4982DY-T1 S-03950--Rev. 26-May-03

    SI4982DY PART MARKING

    Abstract: No abstract text available
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 ID (A) 0.150 at VGS = 10 V 2.6 0.180 at VGS = 6 V 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si4982DY 2002/95/EC Si4982DY-T1-E3 Si4982DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI4982DY PART MARKING

    Untitled

    Abstract: No abstract text available
    Text: Si4982DY Vishay Siliconix Dual N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.150 @ VGS = 10 V 2.6 0.180 @ VGS = 6 V 2.4 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S Ordering Information: Si4982DY Si4982DY-T1 (with Tape and Reel)


    Original     		PDF Si4982DY Si4982DY-T1 18-Jul-08

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


    Original     		PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    sud*50n025-06p

    Abstract: SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110
    Text: SELECTOR GUIDE V I S H A Y I N T E R T E C H N O L O G Y, I N C . Power MOSFETs for DC/DC Applications Siliconix LITTLE FOOT LITTLE FOOT® Plus Tr e n c h F E T ® WFET ChipFET® P ow e r PA K ® Application-Specific MOSFETs w w w. v i s h a y. c o m


    Original     		PDF VSA-SG0019-0310 sud*50n025-06p SUD70N03-04P SI9120 sum45n25 SI9119 Si7810DN sud*50n025-09p SI2301ADS SI4732CY si9110

    IRF7342

    Abstract: IRF7205 SI9933ADY IRF7103 IRF7104 SI4948EY SI4982DY SI9407AEY SI9939DY SI9942DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce S M D S08 n p O M 3 B O flM T e n b flMana30H pa6oHMXTeMnepaiyp Kofl: Rds Hanpa^eHMe CTOK-MCTOK IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103


    OCR Scan     		PDF flMana30H IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103 SI9942DY SI4948EY SI9933ADY IRF7342 IRF7205 SI9407AEY SI9939DY

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		PDF SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671

    sot23 BS170

    Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120


    OCR Scan     		PDF BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 sot23 BS170 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100