Si7884DP
Abstract: Si7884DP-T1-E3
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7884DP
Si7884DP-T1-E3
Si7884DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
S-40951--Rev.
10-May-04
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
08-Apr-05
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Si7884DP-T1-E3
Abstract: Si7884DP Si7884DP-T1
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with
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Si7884DP
Si7884DP-T1
Si7884DP-T1-E3
S-52555-Rev.
19-Dec-05
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
S-31727--Rev.
18-Aug-03
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
S-31727--Rev.
18-Aug-03
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Si7884DP
Abstract: No abstract text available
Text: Si7884DP New Product Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
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Si7884DP
07-mm
S-21341--Rev.
05-ug-02
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Si7884DP
Abstract: No abstract text available
Text: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7884DP
S-60244Rev.
20-Feb-06
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7884DP
Si7884DP-T1-E3
Si7884DP-T1-GE3
11-Mar-11
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Si7884DP
Abstract: us1150
Text: \\\ SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7884DP
0-to-10V
06-Jun-02
us1150
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si7884dp
Abstract: SI7884DP-T1-E3
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7884DP
Si7884DP-T1-E3
Si7884DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si7884DP
Abstract: No abstract text available
Text: SPICE Device Model Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7884DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with
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Si7884DP
07-mm
Si7884DP-T1
Si7884DP-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
S-32077--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • Halogen-free available • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK®
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Si7884DP
Si7884DP-T1-E3
Si7884DP-T1-GE3
08-Apr-05
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AN609
Abstract: Si7884DP 13512
Text: Si7884DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7884DP
AN609
19-Jan-06
13512
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Si7884DP
Abstract: Si7884DP-T1 S-320-7
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 20 0.0095 @ VGS = 4.5 V 17 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching
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Si7884DP
07-mm
Si7884DP-T1
S-32077--Rev.
13-Oct-03
S-320-7
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Untitled
Abstract: No abstract text available
Text: Si7884DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (Ω) ID (A) 0.007 at VGS = 10 V 20 0.0095 at VGS = 4.5 V 17 PowerPAK SO-8 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with
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Si7884DP
Si7884DP-T1
Si7884DP-T1-E3
08-Apr-05
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3845 48V to 12V buck boost converter
Abstract: ltc 3845 3845 ic 3845 n equivalent VALUE IC PIN CONFIGURATION OF IC 3845 3845 an ic 3845 ic PIN DIAGRAM regulator 48V to 12v ic 3845 REG IC 48V IN 12V 10A OUT ic
Text: LT3845 High Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Voltage Operation: Up to 60V Synchronizable Up to 600kHz Adjustable Constant Frequency: 100kHz to 500kHz
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LT3845
600kHz
100kHz
500kHz
16-Lead
200kHz
LT3800
LT3844
3845 48V to 12V buck boost converter
ltc 3845
3845 ic
3845 n equivalent VALUE IC
PIN CONFIGURATION OF IC 3845
3845 an ic
3845 ic PIN DIAGRAM
regulator 48V to 12v
ic 3845
REG IC 48V IN 12V 10A OUT ic
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LT3742
Abstract: MBRD320 PDS540 SBM1040 UPS340 UPS840 Super Capacitor Charger Nippon capacitors
Text: LT3742 Dual, 2-Phase Step-Down Switching Controller Features n n n n n n n n n n Description Wide Input Voltage Range: 4V to 30V Wide Output Voltage Range: 0.8V to VIN Low Shutdown IQ: 20µA Out-of-Phase Controllers Reduce Required Input Capacitance and Power Supply Induced Noise
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LT3742
500kHz
24-Lead
LTC3835/LTC3835-1
LTC3850
LT3845
100kHz
500kHz,
600kHz
LT3742
MBRD320
PDS540
SBM1040
UPS340
UPS840
Super Capacitor Charger
Nippon capacitors
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pulse load resistors wattage calculation
Abstract: zener diode 18V 1W, 5% philips BZX84C18 BZX84C8V2 IRF7822 MIC2584 MIC2585 Si7892DP
Text: MIC2584/2585 Micrel MIC2584/MIC2585 Dual-Channel Hot Swap Controller/Sequencer General Description Features The MIC2584 and MIC2585 are dual-channel positive voltage hot swap controllers designed to facilitate the safe insertion of boards into live system backplanes. The MIC2584
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MIC2584/2585
MIC2584/MIC2585
MIC2584
MIC2585
MIC2584
16-pin
24-pin
MIC2584/85
MIC2585
pulse load resistors wattage calculation
zener diode 18V 1W, 5% philips
BZX84C18
BZX84C8V2
IRF7822
Si7892DP
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Untitled
Abstract: No abstract text available
Text: LTC3775 High Frequency Synchronous Step-Down Voltage Mode DC/DC Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n Wide VIN Range: 4.5V to 38V Line Feedforward Compensation Low Minimum On-Time: tON MIN < 30ns Powerful Onboard MOSFET Drivers Leading Edge Modulation Voltage Mode Control
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LTC3775
250kHz
16-Lead
780kHz,
LTC3860
LTC3853
750kHz,
3775fa
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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74670
Abstract: AN830 Si7884DP
Text: AN830 Vishay Siliconix Current Ratings for Vishay Siliconix MOSFETs By Spiro Zefferys and Dave MacDonald SUMMARY Vishay uses three approaches in providing the continuous drain current ID rating for its MOSFETs. The values are printed in the "Absolute Maximum Ratings" table on the first
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AN830
07-May-07
74670
AN830
Si7884DP
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