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Vishay Siliconix SIHF22N60E-GE3 MOSFET N-CH 600V 21A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF22N60E-GE3	Tube	946		1	1 $4.96 10 $4.96 100 $4.96 1000 $1.8125 10000 $1.8125	Buy Now
Vishay Siliconix SIHF22N60E-E3 MOSFET N-CH 600V 21A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF22N60E-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.61831 10000 $1.61831	Buy Now
Vishay Siliconix SIHF22N60S-E3 MOSFET N-CH 600V 22A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF22N60S-E3	Tube			1,000	1 - 10 - 100 - 1000 $1.6789 10000 $1.6789	Buy Now
Vishay Siliconix SIHF22N65E-GE3 MOSFET N-CH 650V 22A TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHF22N65E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $2.2 10000 $2.2	Buy Now
Vishay Intertechnologies SIHF22N60E-GE3 N-CHANNEL 600V - Bulk (Alt: 19X1936)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHF22N60E-GE3	Bulk		8 Weeks, 4 Days	1	1 $3.08 10 $2.78 100 $2.21 1000 $2.21 10000 $2.21	Buy Now
	SIHF22N60E-GE3	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $1.8125 10000 $1.70588	Buy Now
Mouser Electronics	SIHF22N60E-GE3		1,348			1 $4.07 10 $3.25 100 $2.21 1000 $1.85 10000 $1.81	Buy Now
Newark	SIHF22N60E-GE3	Bulk	114		1	1 $2.45 10 $2.45 100 $2.07 1000 $2.07 10000 $2.07	Buy Now
TTI	SIHF22N60E-GE3	Tube			1,000	1 - 10 - 100 - 1000 $1.89 10000 $1.81	Buy Now
TME	SIHF22N60E-GE3				1	1 $3.83 10 $3.45 100 $2.74 1000 $2.56 10000 $2.56	Get Quote

Avnet Asia	SIHF22N60E-GE3			21 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIHF22N60E-GE3			20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SIHF22N Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
SIHF22N60E-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220	Original	PDF
SIHF22N60E-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220	Original	PDF
SIHF22N60S-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220FP	Original	PDF
SIHF22N65E-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220FK	Original	PDF

SIHF22N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SiHF22N60 Abstract: SiHF22N60S-E3 0949 sihF22n6 Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron	Original	SiHF22N60S 2002/95/EC O-220 SiHF22N60S-E3 11-Mar-11 SiHF22N60 0949 sihF22n6	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E 2002/95/EC O-220 11-Mar-11	PDF
SiHF22N60 Abstract: SiHF22N60S-E3 Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08 SiHF22N60	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested	Original	SiHF22N60S 2002/95/EC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)	Original	SiHF22N60S O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single APPLICATIONS D	Original	SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SIHF22N60E Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E 2002/95/EC O-220 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHF22N60E AN609, 2985m 2220m 4617m 0477m 0778m 9408m 20-Jun-12	PDF
Untitled Abstract: No abstract text available Text: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are	Original	SiHF22N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested	Original	SiHF22N60S 2002/95/EC O-220 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC	Original	SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263)	PDF
Untitled Abstract: No abstract text available Text: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.	Original	SiHF22N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
sihf22n60 Abstract: No abstract text available Text: SiHF22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	SiHF22N60S AN609, 02-Nov-10 8250m 6016m 0775m 2647m 8575m 0718m sihf22n60	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D APPLICATIONS	Original	SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF

sihf22n60 Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two	Original	SiHF22N60E 2002/95/EC O-220 11-Mar-11 sihf22n60	PDF
SIHF22N60E-GE3 Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SIHF22N60E-GE3	PDF
Untitled Abstract: No abstract text available Text: SiHF22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiHF22N65E AN609, 4896m 9611m 2290m 6826m 08-Aug-14	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E 2002/95/EC O-220 11-Mar-11	PDF
SIHP22N60S-E3 Abstract: max6265 siliconix mosfet marking to-220 Text: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17	Original	SiHP22N60S SiHF22N60S O-220 O-220 SiHP22N60S-E3 SiHF22N60S-E3 18-Jul-08 max6265 siliconix mosfet marking to-220	PDF
SiHF22N60S-E3 Abstract: No abstract text available Text: SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability	Original	SiHF22N60S O-220 2002/95/EC SiHF22N60S-E3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: SiHF22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Low Figure-of-Merit (FOM) Ron x Qg	Original	SiHF22N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
TO-247 FULLPAK Package Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction	Original	enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E	PDF
60 SMD 5050 Ultra Bright LEDs Abstract: MMA 0204 HV - Professional Text: Vishay Intertechnology, Inc. One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components To view datasheets of the products contained in the Engineer’s Toolbox, please visit www.vishay.com/ref/et1 Alternative	Original	VMN-MS6495-1011 60 SMD 5050 Ultra Bright LEDs MMA 0204 HV - Professional	PDF

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SIHF22N Datasheets (4)

SIHF22N Datasheets Context Search

SiHF22N60

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SiHF22N60

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SIHF22N60E

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sihf22n60

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sihf22n60

SIHF22N60E-GE3

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SIHP22N60S-E3

SiHF22N60S-E3

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TO-247 FULLPAK Package

60 SMD 5050 Ultra Bright LEDs