IRFB16N50K
Abstract: SiHFB16N50K SiHFB16N50K-E3
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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Original
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IRFB16N50K,
SiHFB16N50K
O-220
18-Jul-08
IRFB16N50K
SiHFB16N50K-E3
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PDF
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IRFB16N50K
Abstract: SiHFB16N50K SiHFB16N50K-E3
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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Original
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IRFB16N50K,
SiHFB16N50K
O-220
18-Jul-08
IRFB16N50K
SiHFB16N50K-E3
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFB16N50K, SiHFB16N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.285 Qg (Max.) (nC) 89 Qgs (nC) 27 Qgd (nC) 43 Configuration Available RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT
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Original
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IRFB16N50K,
SiHFB16N50K
O-220
O-220
IRFB16N50KPbF
SiHFB16N50K-E3
IRFB16Nmerchantability,
12-Mar-07
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PDF
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