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    SIHP22N Price and Stock

    Vishay Siliconix SIHP22N60AE-BE3

    N-CHANNEL 600V
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    DigiKey SIHP22N60AE-BE3 Tube 1,944 1
    • 1 $3.76
    • 10 $3.76
    • 100 $3.76
    • 1000 $1.68624
    • 10000 $1.68624
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    Vishay Siliconix SIHP22N60E-E3

    MOSFET N-CH 600V 21A TO220AB
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    DigiKey SIHP22N60E-E3 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.8125
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    Vishay Siliconix SIHP22N60S-E3

    MOSFET N-CH 600V 22A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60S-E3 Tube 1,000
    • 1 -
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    • 1000 $1.64588
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    Vishay Siliconix SIHP22N65E-GE3

    MOSFET N-CH 650V 22A TO220AB
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    DigiKey SIHP22N65E-GE3 Tube 1,000
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    • 1000 $2.075
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    Vishay Siliconix SIHP22N60E-GE3

    MOSFET N-CH 600V 21A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP22N60E-GE3 Tube 1,000
    • 1 -
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    • 100 -
    • 1000 $1.8125
    • 10000 $1.8125
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    Find more SIHP22N price and stock on Findchips.com

    SIHP22N Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP22N60AE-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 20A TO220AB Original PDF
    SIHP22N60AEL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 600V Original PDF
    SIHP22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB Original PDF
    SIHP22N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 19A TO220AB Original PDF
    SIHP22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A TO220AB Original PDF
    SIHP22N60EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO220AB Original PDF
    SIHP22N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A TO220 Original PDF
    SIHP22N65E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 22A TO-220AB Original PDF

    SIHP22N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sihp22n6

    Abstract: SiHP22N60E-GE3
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihp22n6 SiHP22N60E-GE3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08 PDF

    SiHP22N60S-E3

    Abstract: SiHP22N60S
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		SiHP22N60S O-220 2002/95/EC SiHP22N60S-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIHP22N60E

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		SiHP22N60E 2002/95/EC O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low figure-of-merit (FOM) Ron x Qg


    Original     		SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E 2002/95/EC O-220AB 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) () VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 Qgd (nC) 25 • Ultra Low Ron


    Original     		SiHP22N60S 2002/95/EC O-220AB O-220AB SiHP22N60S-E3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC


    Original     		SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263) PDF

    TO-220aB 11A

    Abstract: No abstract text available
    Text: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHP22N60S 2002/95/EC O-220AB 11-Mar-11 TO-220aB 11A PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHP22N60S 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.18 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * This datasheet provides information about parts that are


    Original     		SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiHP22N60S AN609, 8329m 5274m 4375m 23-Aug-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP22N65E AN609, 7570u 6281m 6682m 0914u 23-Jul-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • High EAR Capability 650 RDS(on) max. at 25 °C () VGS = 10 V 0.190 98 • Lower Figure-of-Merit Ron x Qg Qgs (nC) 17 • 100 % Avalanche Tested


    Original     		SiHP22N60S 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SIHP22N60S-E3

    Abstract: max6265 siliconix mosfet marking to-220
    Text: Preliminary SiHP22N60S, SiHF22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.19 Qg (Max.) (nC) 96 • 100 % Avalanche tested Qgs (nC) 17


    Original     		SiHP22N60S SiHF22N60S O-220 O-220 SiHP22N60S-E3 SiHF22N60S-E3 18-Jul-08 max6265 siliconix mosfet marking to-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		SiHP22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		SiHP22N60S O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF