BUK551-60A
Abstract: BUK551-60B T0220AB fet transistor ft
Text: Philips Com ponents D ata sheet status Preliminary specification d ate of issue March 1991 5bE PINNING - T0220AB PIN m 7110fl2b GO MM b ö M 465 • PHIN SYMBOL PARAMETER MAX. MAX. V ds Id P« T. BUK551 Drain-source voltage Drain current DC Total power dissipation
|
OCR Scan
|
PDF
|
BUK551-60A/B
7110fl2b
T0220AB
BUK551
T-39-11
711QflSb
BUK551-60A
BUK551-60B
fet transistor ft
|
T0-220AB
Abstract: SOT-263
Text: MOUNTING INSTRUCTIONS Page SOT223 1140 SOT186; SOT263; T0220AB 1152
|
OCR Scan
|
PDF
|
OT223
OT186;
OT263;
T0220AB
T0-220AB
SOT-263
|
NPN Transistor VCEO 1000V
Abstract: LB 137 transistor
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in a T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
|
OCR Scan
|
PDF
|
BUJ204A
T0220AB
MAX04A
100US
NPN Transistor VCEO 1000V
LB 137 transistor
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUÜ403A GENERAL DESCRIPTION High-voltage, high-sf>eed planar-passivated npn power switching transistor in T0220AB envelope intended for use in electronic HF/OH lighting ballast applications, converters, inverters, switching regulators, motor control systems,
|
OCR Scan
|
PDF
|
T0220AB
BUJ403A
|
BUT12
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/nigh frequency lighting ballast applications and converters, inverters, switching regulators,
|
OCR Scan
|
PDF
|
BUT12AI
T0220AB
20icon
1E-01
1E-02
BUT12
|
T0-220AB
Abstract: SOT-263
Text: MECHANICAL DATA page SOT93 618 SOT 186 619 T0220AB 620 SOT223 621 SOT227B 622 SOT263 623 SOT263 lead form option 624
|
OCR Scan
|
PDF
|
T0220AB
OT223
OT227B
OT263
T0-220AB
SOT-263
|
PS2045CT
Abstract: PS3045CT STPS1545CF STPS10100 STPS1045D STPS10L25D ps2045 STPS10100D stps3045ct STPS1545CT
Text: POWER RECTIFIERS rz 7 POWER SCHOTTKY DIODES T0220AC ^ 7/ ISOWATT220AC T0220AB SGS-THOMSON » « m it g ïïM D t g l ISOWATT220AB T0220 TYPE SCHOTTKY RECTIFIERS T j max =150°C (except for 15V & 25V) lo V rrm I r @ V rrm Max (mA) I fsm (V) V f @ lo Max (V)
|
OCR Scan
|
PDF
|
T0220AC
ISOWATT220AC
T0220AB
ISOWATT220AB
T0220
STPS745D
STPS1045D
STPS10100D
STPS10L25D
STPS15L25D
PS2045CT
PS3045CT
STPS1545CF
STPS10100
ps2045
stps3045ct
STPS1545CT
|
Untitled
Abstract: No abstract text available
Text: FEP16AT THRU FEP16JT FAST EFFICIENT GLASS PASSIVATED RECTIFIER Voltage - 50 to 600 Volts Current - 16.0 Amperes FEATURES T0220AB ♦ Dual rectifier construciton, positive centertap ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0
|
OCR Scan
|
PDF
|
FEP16AT
FEP16JT
T0220AB
530al
|
Untitled
Abstract: No abstract text available
Text: T0220AB 0 .3 5 0 8 .8 9 0 .3 3 0 (8 .3 9 ) 0.105(2.67) 0.095(2.41) 0.0 3 7 (0 .9 4 ) '0 .0 2 7 (0 .6 8 ) SC A L E : 2:1 0.185(4.70) 0.1 7 5 (4 .4 4 ) 0.055(1.39) '0 .0 4 5 (1 .1 4 ) 0.603(15.3 g ) 0 .5 7 3 (1 4 .5 5 ) 0.560(14.g g ) 0 .5 3 0 (1 3 .4 6 )
|
OCR Scan
|
PDF
|
O-220AB
|
T0-220AB
Abstract: SOT-263
Text: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133
|
OCR Scan
|
PDF
|
OT186
OT186A
OT223
OT263
OT263-01
OT404
OT426
T0220AB
T0-220AB
SOT-263
|
T0-220AB
Abstract: SOT-263
Text: MOUNTING INSTRUCTIONS page SOT93 626 SOT186; SOT263; T0220AB 633 SOT227B ISOTOP 639 SOT223 642
|
OCR Scan
|
PDF
|
OT186;
OT263;
T0220AB
OT227B
OT223
T0-220AB
SOT-263
|
T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
|
OCR Scan
|
PDF
|
BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
|
BUT11A1
Abstract: Power Bipolar Transistors bu2708dx BU2725DX BU1508AX BU4506AX BU2532 BU4506AF BU2720DX BU2527
Text: LEADED PACKAGES VcESM V 1500 tf lc lc (DC) sat. max. (A) 2.5 (A) 2 fas) 0.9 S0T82 S0T78 (T0220AB) S0T186A S0T186 (isolated S0T199 T0220AB) BU505 BU505D BU505F BU505DF BU506 BU506D BU506F BU506DF S0T399 (TOP3D) SOT429 (T0247) SOT430 (TOP3L) TYPICAL APPLICATIONS
|
OCR Scan
|
PDF
|
S0T82
S0T78
T0220AB)
BU505
BU505D
BU506
BU506D
S0T186A
S0T186
BU505F
BUT11A1
Power Bipolar Transistors
bu2708dx
BU2725DX
BU1508AX
BU4506AX
BU2532
BU4506AF
BU2720DX
BU2527
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
|
OCR Scan
|
PDF
|
BUJ103A
T0220AB
|
|
|
837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
|
OCR Scan
|
PDF
|
BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
|
TRANSISTOR C 557 B
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effeot power transistor in a plastic envelope. The device is intended for use in Automotive and general purpose switching applications. PINNING-T0220AB
|
OCR Scan
|
PDF
|
BUK456-60H
PINNING-T0220AB
TRANSISTOR C 557 B
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
|
OCR Scan
|
PDF
|
BUJ304A
T0220AB
|
Untitled
Abstract: No abstract text available
Text: MOUNTING AND SOLDERING INSTRUCTIONS page TO126/SOT82 768 SOT186/A; SOT78 T0220AB 772 SOT199/SOT429 (TC>247)/SOT339 (TOP3D) 776 Philips Semiconductors Power Bipolar Transistors Mounting and Soldering GENERAL DATA AND INSTRUCTIONS FOR T0126/S0T82 When the driven nut or screw is in direct contact with a
|
OCR Scan
|
PDF
|
O126/SOT82
OT186/A;
T0220AB)
OT199/SOT429
/SOT339
T0126/S0T82
|
wk 2 e transistor
Abstract: transistor BU 705 BUT21
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
|
OCR Scan
|
PDF
|
BUT211
T0220AB
T0220AB1
wk 2 e transistor
transistor BU 705
BUT21
|
BUT12
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT12AI GENERAL DESCRIPTION Improved high-voltage, high-speed glass-passivated npn power transistor in a T0220AB envelope specially suited for use in overhead/high frequency lighting ballast applications and converters, inverters, switching regulators,
|
OCR Scan
|
PDF
|
BUT12AI
T0220AB
BUT12
|
BUT21
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in T0220AB envelope specially suited for high frequency electronic lighting ballast applications.
|
OCR Scan
|
PDF
|
BUT211
T0220AB
BUT21
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION PINNING - T0220AB SYMBOL Id p« T, R d S ON PARAMETER MAX. MAX. BUK452 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state
|
OCR Scan
|
PDF
|
BUK452-100A/B
BUK452
-100A
-100B
T0220AB
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ403A GENERAL DESCRIPTION High-voltage, high-speed pianar-passivated npn power switching transistor in T0220AB envelope intended for use in nigh frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
|
OCR Scan
|
PDF
|
BUJ403A
T0220AB
|
IGBTs Transistors
Abstract: No abstract text available
Text: PACKAGE OUTLINES Page SOT186 1126 SOT186A 1127 SOT223 1128 SOT263 1129 SOT263-01 1130 SOT404 1131 SOT426 1132 T0220AB 1133 Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Dimensions in mm _ , Package outlines 9 10.2 max 5.7 max N et Mass: 2 g
|
OCR Scan
|
PDF
|
OT186
OT186A
OT223
OT263
OT263-01
OT404
OT426
T0220AB
OT186;
IGBTs Transistors
|