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SunFounder ST0237 H2010 SPEED IR MEASURING MODULE
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DigiKey	ST0237	Bag	16		1	1 $14.87 10 $14.87 100 $9.3059 1000 $7.4875 10000 $7.4875	Buy Now
DFRobot FIT0237 12MM (0.47) LINEAR BEARING
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DigiKey	FIT0237	Bulk			1	1 $9.9 10 $9.9 100 $9.9 1000 $9.9 10000 $9.9	Buy Now
Amgis Toroids SWT-0.2-374 FIXED IND 374UH 200MA 2.7 OHM TH
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DigiKey	SWT-0.2-374	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Sfernice RCMT0237401BES03 SFERNICE FIXED RESISTORS
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DigiKey	RCMT0237401BES03	Bag			10	1 - 10 $73.71 100 $73.71 1000 $73.71 10000 $73.71	Buy Now
Vishay Sfernice RCMT0237401DES03 SFERNICE FIXED RESISTORS
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DigiKey	RCMT0237401DES03	Bag			10	1 - 10 $44.756 100 $44.756 1000 $44.756 10000 $44.756	Buy Now

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T0237 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
datasheet s402 Abstract: s402 Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDF-4R6-001 REV: 3 Page: 1/5 0.39" Quadruple Digit Displays ELF-4R6GWB/S402 PART NO. : ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ● Instrument panels	Original	PDF	CDDF-4R6-001 ELF-4R6GWB/S402 30min datasheet s402 s402
CDLE-031-106 Abstract: No abstract text available Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDLE-031-106 REV.: 1 Page: 1/4 4.7mm Round Type LED Lamps PART NO. : 313-2UYT/S530-A4 ECN: █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust Package Dimensions:	Original	PDF	CDLE-031-106 313-2UYT/S530-A4 30min CDLE-031-106
2SC1861 Abstract: mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A Text: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 go. 95 PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 Manufacturer V(BR)CEO hFE Ic Max (A) fT (Hz) PhilipsElec Siemens Akt See Index	Original	PDF	PN3440 BFN22 BF622 BF422S PE422 S922TS BF822S S2057 2SC3333 2SC3334 2SC1861 mpsa42q LOW-POWER SILICON NPN BF417 sm 6aa PE155A
ELS-316SURDB/S530-A3 Abstract: T02373 Text: EVERLIGHT ELECTRONICS CO.,LTD. Device Number : CDDS-316-027 REV: 1 Page: 1/5 0.36" Singlel Digit Displays PART NO. : ELS-316SURDB/S530-A3 ECN : █ Features : █ Applications: ● Industrial standard size. ● Audio equipment ● Low power consumption. ●	Original	PDF	CDDS-316-027 ELS-316SURDB/S530-A3 ELS-316 30min ELS-316SURDB/S530-A3 T02373
Untitled Abstract: No abstract text available Text: Package Information Vishay Siliconix TO−263 D2PAK : 3−LEAD - B- A INCHES E C2 L2 - A- E1 D1 D L 1 3 L3 2 A A b2 E2 Detail A b C e 0.010 M A M L4 2 PL 0_ - 5_ Dim A b b1 b2 c* c1 c2 D D1 E E1 E2* e L L1 L2 L3 L4 M Min Max 0.160 0.190 0.020 0.039 0.020	Original	PDF	O-263 T-02378--Rev. 03-Feb-03 29-Jan-03
SST5484 Abstract: No abstract text available Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max \| Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0	OCR Scan	PDF	T0220 T0237 T0220AA PN4117A PN4118A PN4119A 2N4416A 2N4117A 2N4118A 2N4119A SST5484
N-Channel JFET FETs Abstract: T072 Text: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber \| Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60	OCR Scan	PDF	T0220 T0237 T0226AA VP0300L BS250 VP0610L P06I0L VP0808L VP1008L TP1220L N-Channel JFET FETs T072
2410m Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002 Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■	OCR Scan	PDF	T0220 14-Pin 1001P 1001J 1004J 1004P L000J 1000P 1006P T0236 2410m 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Untitled Abstract: No abstract text available Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì \|g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)	OCR Scan	PDF	T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T
2N2907a national Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A Text: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150	OCR Scan	PDF	2N2904A 2N2905A 2N2907A MMBT2907A O-236* PN2907A T0-92 PN3645 TN2905A 2N2907a national 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725
NTE130 Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211 Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd T 4 30 Min 8 150 80 (CER) 5 20 Min 50 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)	OCR Scan	PDF	27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
2N6717 Abstract: 2N6728 2N6716 92GU05 92GU06 T060 Text: 92GU05,06 2N6716.17 NPN POWER TRANSISTORS 60-80 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6728, 29/92GU55, 56 SERIES Applications: • High Vc e ratings: 92GU05 = 60V min. VCEO 92GU06 = 80V min. VcEO EMITTER • Exceptional power-to-price ratio C A S E S TY LE TO-237	OCR Scan	PDF	2N6728, 29/92GU55, 92GU05 92GU06 92GU05/2N6716 92GU06A/2N6717 92GU05 2N6716 92GU06 2N6717 2N6728 2N6716 T060
diac D30 Abstract: db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551 Text: Continental Device India Limited An IS/ISO 9002 & IECQ. certified manufacturer of quality discrete semiconductor components Surface Mount SOT-23 Semiconductors , , Transistors Z ener Diodes Switching and Schottky Diodes Quick Reference Data CONTINENTAL DEVICE INDIA LIMITED	OCR Scan	PDF	OT-23 C-120, conventN1711 2N1893 2N2102 2N2218A 2N2219A 2N3019 2N3503 2N3700 diac D30 db3 diac bc 9013 marking 4d NPN ZN 5551 diode DIAC DB3 EQUIVALENT BZXS4C24V 8Z-2 9014 sot-23 ZT 5551
Untitled Abstract: No abstract text available Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo	OCR Scan	PDF	NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD

2N6728 Abstract: BC546 BC556 2N4036 national NSDU05 Text: bflÇ ]> • b S 0 1 1 3 G D G B T S lb 4 3 b « N S C S General Purpose Amplifiers and Switches continued; _ _ N A T L SEni COND ( D I S C R E T E (Volts) Min 65 60 PNP NPN - f i Devices V C E 0 ( m i s I) fT @»c hF E @ lc mA NF (dB) Max Min Max	OCR Scan	PDF	BC546 BC846 T0-92 O-236* 2N4036 BC556 BC856 TN4036 2N6728 2N4036 national NSDU05
NTE130 Abstract: NTE199 NPN RF Amplifier NTE241 Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)	OCR Scan	PDF	27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241
BD371C-10 Abstract: BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6 Text: NATL S E M IC O N D H E D IS C R E T E D • tS0 1 1 3 D 0Q371SB fi 1 S -a CM T" O z CM eg Y~ o CM r* ST -f u T-03-01 « e 3 m o o s i o « 0 *c a) /) c o z Sï (/) « fl «?&2 <D » <D o f X a Jr i o Û) 8 S to CO LU o CL k. w o Q. m S's U o o o o o o o o	OCR Scan	PDF	b50113D L5D1130 T-03-01 BD371C-10 BD371D BF494 BF936 yc 236 b055 BC338-25 NATIONAL SEMICONDUCTOR BD371B BD371C BD371C-6
NTE130 Abstract: NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192 Text: N T E ELECTRONICS INC S2E D • b M B l S S ^ a D O S S I 6 024 B I N T E TRANSI5TÖ BS-6U PO LA B T —33—01 Maximum Breakdown Voltage Collector to Base Volts) Collector to Emitter (Volts) Emitter Io Basa (Volts) Typical Forward Current Gain Maximum Collector	OCR Scan	PDF	T-33-01 NTE192A) T092HS 27MHZ, 226MP NTE226 T0237 45MHZ NTE199) 50MHZ) NTE130 NTE199 NTE234 NTE192A 27MHZ NTE196 NTE197 T092 T092H NTE192
NTE153 Abstract: Nte 157 NTE123AP nte129 NTE159M nte123 Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,	OCR Scan	PDF	NTE159M) NTE159) T066- NTE123A) NTE153 Nte 157 NTE123AP nte129 NTE159M nte123
2N671A Abstract: 2N671 2N6727 2n671 transistor 2N6715 2N6726 TRANSISTOR 726 2N6714 Text: Datasheet Central 2N6714 2N6726 Semiconductor Corp. 2N6715 2N6727 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	2N6714 2N6715 2N6726 2N6727 O-237 2N6714, 2N671it, 2N6726) 2N6715, 2N671A 2N671 2n671 transistor TRANSISTOR 726
BC337 BC547 Abstract: BC182 BC547 BC547 surface mount T0-92 BT2907A TN2905A BC237 2n5962 Text: bSD113Q DDa^Sl? 372 * N S C 5 m Devices Volts Min •c Min Max 2N4032 1000 100 2N6554 1500 80 SEniCOND PNP NF (dB) Max Package I’ d (A n ti» (mW) @25°C mA (MHz) Min mA 300 100 150 50 TO-39 800 300 50 75 50 T0-202(55) 1333 M M BT2907A 600 100 300 150	OCR Scan	PDF	bSD113Q 2N4032 2N6554 BT2907A PN2907A PN3645 PN4249 PN4250A PN4355 TN2905A BC337 BC547 BC182 BC547 BC547 surface mount T0-92 TN2905A BC237 2n5962
T0236 Abstract: to236 2N2222A Text: bßE T> m bSQ113G CHM * N S C S NATL SEniCOND DISCRETE Devices VcEO(sust) (Volts) Min NPN 60 50 01» PNP mA Min mA VcE{sat) lc 4 Ig (Volts) Max mA T (MHz) mA Min P D(Amb\| Package (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150	OCR Scan	PDF	bSQ113G 2N2904A 2N2905A 2N2907A MMBT2907A PN2907A PN3645 TN2905A O-236* T0-92 T0236 to236 2N2222A
2N6714 Abstract: 2N6726 2N6727 92GU51 92GU51A 30C40 Text: 92GU51.51A 2N6726.27 PNP POWER TRANSISTORS -30- -40 VOLTS 2 AMPS, 1.2 WATTS COMPLEMENTARY TO THE 2N6714,15/92GU01, 01A SERIES Applications: • Class “B” audio outputs/drivers. • General purpose switching and lamp drive in industrial and automotive circuits.	OCR Scan	PDF	2N6714 15/92GU01, 92GU51 2N6726 -30-C-40) O-237 03r-Emitter 2N6726 -10mA, 2N6727 92GU51A 30C40
2n2907 TO-92 Abstract: BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337 Text: Process National Semiconductor 3 S o -(pS 2_ 63 PNP M edium Row ^ 12. ( 2 13 2 1 Uj- D ESC R IPT IO N 3.020 Process 63 is a non-overlay, double-diffused, si I epitaxial device. Complement to Process 19. A PPLIC A T IO N This device was designed for use as general pure	OCR Scan	PDF	2N2905 2N2907 2N4403 2N3702 O-237: TN2905 T0-237 2N3416 T0-92 2N3417 2n2907 TO-92 BC337 hie hre hfe bc337 hie c237a C714B BC337 hoe 2N3702 NATIONAL SEMICONDUCTOR C2371 C2379 hie for bc337

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SunFounder ST0237

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T0237 Datasheets Context Search

datasheet s402

CDLE-031-106

2SC1861

ELS-316SURDB/S530-A3

Untitled

SST5484

N-Channel JFET FETs

2410m

Untitled

2N2907a national

NTE130

2N6717

diac D30

Untitled

2N6728

NTE130

BD371C-10

NTE130

NTE153

2N671A

BC337 BC547

T0236

2N6714

2n2907 TO-92