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    p12n60c3

    Abstract: p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Chan nel IG BTs Jan ua ry 1997 F ea tu res Description • 24A, 600V at Tc = 25 °C The HGTP12N60C3, H G T1S12N60C3 and HG T1S12N60C3S are MOS gated high voltage switching devices combining the


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    PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S T1S12N60C3 T1S12N60C3S p12n60c3 p12n60 P12N60C T1S12 HRP1560 s12n S12N60C3 HGTP12N60 S12N60C

    2n60c3

    Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
    Text: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, T1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices


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    PDF HGTP12N60C3D, 2N60C3D, HGT1S12N60C3DS TA49123. TA49188. 2n60c3 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent

    p12n60c3

    Abstract: p12n60 HGT1S12N60C3S HGT1S12N60C3S9A HGTP12N60C3 LD26 S12N60C3 TA49123
    Text: i n t e HGTP12N60C3, T1S12N60C3S r r i i J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


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    PDF HGTP12N60C3 HGT1S12N60C3S TA49123. HGTP12N60rporation p12n60c3 p12n60 HGT1S12N60C3S9A LD26 S12N60C3 TA49123

    p12n60c3

    Abstract: S12N60C3
    Text: HARRIS HGTP12N60C3, T1S12N60C3, T1S12N60C3S S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBTs January 1 9 9 7 Features Description • 24A, 600V at T c = 25°C The HGTP12N60C3, T1S12N60C3 and T1S12N60C3S are MOS gated high voltage switching devices combining the


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    PDF HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S HGT1S12N60C3 230ns p12n60c3 S12N60C3