D43C8
Abstract: No abstract text available
Text: Discrete POWER & Signal Technologies PNP Saturated Switches Device No. 2N5771 PN3640 PN4258 ST5771-1 TN3467A Case Style VCBO VCEO VEBO V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92) 12 TO-92 (92) 12 TO-92 (92) 15 TO-226 (99) 40 12 12 15 40 4 4.5 4.5
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2N5771
PN3640
PN4258
ST5771-1
TN3467A
O-226
D43C8
O-202
D45C8
O-220
D43C8
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1N916
Abstract: MMPQ3467 SOIC-16 TN3467A
Text: TN3467A MMPQ3467 E C B E B E E B TO-226 B E C SOIC-16 B C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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TN3467A
MMPQ3467
O-226
SOIC-16
OT-223
1N916
TN3467A
1N916
MMPQ3467
SOIC-16
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Untitled
Abstract: No abstract text available
Text: TN3467A TN3467A C B TO-226 E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value
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TN3467A
O-226
OT-223
1N916
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PNP 3-224
Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Text: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11
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PN100
PN100A
MMBT100
MMBT100A
PN200
PN200A
MMBT200
MMBT200A
FPN330
FPN330A
PNP 3-224
NPN Transistor PN100A
2N3906 Darlington transistor
2n3904 TRANSISTOR PNP
PNP 2N3904
TRANSISTOR 3182
2N3906 NPN Transistor
PNP switching transistor 2N3906
transistor 338
TN6715A
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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Untitled
Abstract: No abstract text available
Text: S 3 S S M iC ^ N D U C T Q S ?,s TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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TN3467A
MMPQ3467
SOIC-16
TN3467A
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Untitled
Abstract: No abstract text available
Text: S e M lO O N O iJQ T C W » TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5 ° C u n le s s o th e r w is e n o te d
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TN3467A
MMPQ3467
TN3467A
SOIC-16
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MMPQ3467
Abstract: SOIC-16 TN3467A
Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .
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TN3467A
MMPQ3467
O-226
SOIC-16
S0113D
D04DbMfl
MMPQ3467
SOIC-16
TN3467A
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PN3640
Abstract: 2N5771 PN4258 ST5771-1 TN3467A
Text: This PNP Transistors T Material Ln □ b-1 t- 1 UJ □ Copyrighted □ a -c □ -C tr & Semiconductor" V Device No. Case Style 2N5771 By ru PN3640 Its PN4258 Respective io ro ST5771-1 CBO V CEO V EBO (V Min (V) Min (V) Min TO-92 (92) 15 15 4.5 TO-92 (92)
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2N5771
PN3640
PN4258
ST5771-1
TN3467A
O-226
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