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    Text: * 5 S T P 1 9 N06 S T P 1 9 N 0 6 FI S G S -T H O M S O N ULKgraMOeS 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STP19N06 S TP19N06FI dss R D S o n Id 60 V 60 V < 0.1 a < 0.1 a 19 A 13 A • TYPICAL RDS(on) = 0.085 Q . AVALANCHE RUGGED TECHNOLOGY


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    STP19N06 TP19N06FI O-220 ISOWATT220 PDF