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    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP1N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP1N80E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF MTP1N80E/D TP1N80E parti19 21A-06

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet TM O S E -FE T P ow er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 0H M S T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n


    OCR Scan     		PDF TP1N80E