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    TSF10H100C Search Results

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    TSF10H100C Price and Stock

    Taiwan Semiconductor TSF10H100C

    DIODE ARR SCHOT 100V 5A ITO220AB
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    DigiKey TSF10H100C Tube 994 1,000
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    Avnet Americas TSF10H100C Tube 1,000
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    Future Electronics TSF10H100C 1,000
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    Taiwan Semiconductor TSF10H100C C0G

    Diode Schottky 100V 10A 3-Pin(3+Tab) ITO-220AB Tube
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    Verical TSF10H100C C0G 1,000 25
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    Arrow Electronics TSF10H100C C0G 1,000 99 Weeks 1
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    TSF10H100C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSF10H100C C0G Taiwan Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 100V ITO220AB Original PDF

    TSF10H100C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307010 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309046 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022 PDF