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Marktech Optoelectronics MTSM4410SMR2 Infrared Emitters - High Power 1030nm 5.0x5.0 mm SMD Dome Lens
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MTSM4410SMR2					1 $58.36 10 $48.35 100 $46.66 1000 $46.66 10000 $46.66	Get Quote
Marktech Optoelectronics MTSM4410SMR2S Infrared Emitters - High Power 1040nm 5.0x5.0 mm SMD on Starboard Dome Lens
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MTSM4410SMR2S					1 $73.41 10 $63.05 100 $59.9 1000 $59.9 10000 $59.9	Get Quote

TSM4410 Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSM4410		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET		Original	PDF
TSM4410		Taiwan Semiconductor	25V N-Channel MOSFET		Original	PDF
TSM4410		Taiwan Semiconductor	25V N-Channel MOSFET		Original	PDF
TSM4410CS		Taiwan Semiconductor	N-Channel Enhancement Mode MOSFET		Original	PDF
TSM4410CS		Taiwan Semiconductor	25V N-Channel MOSFET		Original	PDF
TSM4410D		Taiwan Semiconductor	Dual N-Channel Enhancement Mode MOSFET		Original	PDF
TSM4410D		Taiwan Semiconductor	25V Dual N-Channel MOSFET		Original	PDF
TSM4410D		Taiwan Semiconductor	25V Dual N-Channel MOSFET		Original	PDF
TSM4410DCS		Taiwan Semiconductor	25V Dual N-Channel MOSFET		Original	PDF
TSM4410DCSRL		Taiwan Semiconductor	Dual N-Channel Enhancement Mode MOSFET		Original	PDF

TSM4410 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
27BSC Abstract: TSM4410D TSM4410DCS Text: TSM4410D 25V Dual N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 5, 6, 7, 8. Drain 25 Features ● ● ID (A) 15 @ VGS = 10V 10 21 @ VGS = 4.5V 8 Block Diagram Advance Trench Process Technology	Original	PDF	TSM4410D TSM4410DCS 27BSC TSM4410D
TSM4410D Abstract: TSM4410DCS Text: TSM4410D Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 Vds = 25V 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 Id = 10A Rds on , Vgs @ 10V, Ids @ 10A = 21mΩ Rds(on), Vgs @ 4.5V, Ids @ 8A = 15mΩ Features	Original	PDF	TSM4410D TSM4410DCS 500/per TSM4410D
27BSC Abstract: TSM4410 TSM4410CS Text: TSM4410 25V N-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain 25 Features ● ● ID (A) 15 @ VGS = 10V 10 21 @ VGS = 4.5V 8 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance	Original	PDF	TSM4410 TSM4410CS 50erty 27BSC TSM4410
TSM4410 Abstract: TSM4410CS Text: TSM4410 Preliminary N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS = 25V ID = 10A RDS on , Vgs @ 10V, Ids @ 10A = 13.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 8A = 20mΩ Features  Advanced trench process technology	Original	PDF	TSM4410 TSM4410CS 500pcs 300uS, TSM4410 TSM4410CS
TS13002 Abstract: TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431 Text: TAIWAN SEMICONDUCTOR APPLICATION NOTE LCD TV / Monitor TV Charger Connector UPS SMPS Audio Scanner DSC Blue Tooth Printer TS1117 TS431 TS34063 TS78xx TS34063 TS494 TS78xx TS78xx TS9000 TS9006 TS34063 TS108x TS317 TS13002 TS431 TSM2N60 TS431 TS358 TS79xx TS9001	Original	PDF	TS1117 TS431 TS34063 TS78xx TS494 TS9000 TS9006 TS13002 TS2576 TS317 TS39204 dvd smps TS2596 TS34063 TSM2301 TS9007 TS431
Untitled Abstract: No abstract text available Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V	OCR Scan	PDF	TSM4410 4410C
27BSC Abstract: TSM4410D TSM4410DCS aa7 diode Text: TAIWAN S SEMICONDUCTOR TSM4410D 25V Dual N-Channel MOSFET pb RoHS CO M PLIAN C E PRODUCT SUMMARY Pin Definition; 1. Source 1 2. Gate 1 RDS(on)(mQ) Id (A) 15 @ V c s = 10V 1Û 21 @ Vüb= 4.5V 8 Vos (V) 2 . S o u rce 2 25 4. G ate 2 5. 6. 7, S. Drain Features	OCR Scan	PDF	TSM4410D TSM4410DCS 27BSC TSM4410D aa7 diode
4410D Abstract: No abstract text available Text: TAIW AN TSM4410D % SEMICONDUCTOR pb: RoHS 25V Dual N-Channel MOSFET CO M PLÌANG E SOPS PRODUCT SUMMARY Pin Definition; 1. Source 1 2. Gate 1 RDS(on imQ) Id (A) 15@ Vcs=10V 1Û Vos (V) 3. Source 2 25 4. Gate 2 21 5. 6. 7, S. Drain Features @ V üb= 4 . 5 V	OCR Scan	PDF	TSM4410D 4410D
TSM4410 Abstract: TSM4410CS D0351 Text: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain	OCR Scan	PDF	TSM4410 TSM4410CS TSM4410 D0351
Untitled Abstract: No abstract text available Text: TAIWAN TSM4410D S SEMICONDUCTOR pb: RoHS 25V Dual N-Channel MOSFET CO M PLÌAN C E SOPS PRODUCT SUMMARY Pin Definition; 1. Source 1 2. Gate 1 RDS(on (mQ) I d (A ) 15@ V cs=10V 1Û 21 @ V üb = 4.5V 8 V os (V ) 3. S o u rce 2 25 4. G ate 2 5. 6. 7, S. Drain	OCR Scan	PDF	TSM4410D TSM4410DCS
Untitled Abstract: No abstract text available Text: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features	OCR Scan	PDF	TSM4410 4410C