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    UNR1210 Search Results

    UNR1210 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UNR1210 Panasonic Silicon NPN epitaxial planer transistor with biult-in resistor Original PDF
    UNR1210 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UNR-1.2/10-D5SM Datel DC-DC Converter: (4.75 to 5.5) V to (1.2) V Original PDF
    UNR-1.2/10-D5T Datel DC-DC Converter: (4.75 to 5.5) V to (1.2) V Original PDF
    UNR1210Q Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF
    UNR1210S Panasonic Silicon NPN Epitaxial Planar Type Transistor Original PDF

    UNR1210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UN1210

    Abstract: UNR1210 XP06210 XP6210
    Text: Composite Transistors XP06210 XP6210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1


    Original     		PDF XP06210 XP6210) UNR1210 UN1210) UN1210 XP06210 XP6210

    UN1210

    Abstract: UNR1210 XP04210 XP4210 panasonic VF-8Z
    Text: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original     		PDF XP04210 XP4210) UNR1210 UN1210) UN1210 XP04210 XP4210 panasonic VF-8Z

    UN1210

    Abstract: UNR1210 XP02210 XP2210
    Text: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element


    Original     		PDF XP02210 XP2210) UNR1210 UN1210) UN1210 XP02210 XP2210

    UN1210

    Abstract: UNR1210 XN02210 XN2210
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1210(UN1210) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original     		PDF XN02210 XN2210) UNR1210 UN1210) UN1210 XN02210 XN2210

    UN1210

    Abstract: UNR1210 XP01210 XP1210
    Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1210(UN1210) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.7±0.1


    Original     		PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UNR1218

    Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1218 UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214

    XN421

    Abstract: UN1210 UNR1210 XN04210 XN4210 panasonic VF-8Z
    Text: Composite Transistors XN04210 XN4210 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6


    Original     		PDF XN04210 XN4210) UNR1210 UN1210) XN421 UN1210 XN04210 XN4210 panasonic VF-8Z

    UN1210

    Abstract: UNR1210 XN01210 XN1210
    Text: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings Unit


    Original     		PDF XN01210 XN1210) UNR1210 UN1210) UN1210 XN01210 XN1210

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    121f

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) 121f UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original     		PDF UNR121x UN121x UNR1210 UNR1211 UNR1212 UNR1213

    Untitled

    Abstract: No abstract text available
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 4 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN02210 XN2210) UNR1210 UN1210)

    UN1210

    Abstract: UNR1210 XP01210 XP1210
    Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP01210 XP1210) UNR1210 UN1210) UN1210 XP01210 XP1210

    UN1210

    Abstract: UNR1210 XN02210 XN2210
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 1.50+0.25 –0.05 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor)


    Original     		PDF XN02210 XN2210) UN1210 UNR1210 XN02210 XN2210

    UN1210

    Abstract: UNR1210 XP02210 XP2210
    Text: Composite Transistors XP02210 XP2210 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP02210 XP2210) UNR1210 UN1210) UN1210 XP02210 XP2210

    UN1210

    Abstract: UNR1210 XN01210 XN1210
    Text: Composite Transistors XN01210 XN1210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 2 2.8+0.2 –0.3 5 1.50+0.25 –0.05 4 0.4±0.2 ● 3 Two elements incorporated into one package.


    Original     		PDF XN01210 XN1210) UNR1210 UN1210) UN1210 XN01210 XN1210

    UN1210

    Abstract: UNR1210 XP06210 XP6210 XP621
    Text: Composite Transistors XP06210 XP6210 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP06210 XP6210) UNR1210 UN1210) UN1210 XP06210 XP6210 XP621

    panasonic VF-8Z

    Abstract: UN1210 UNR1210 XN04210 XN4210
    Text: Composite Transistors XN04210 XN4210 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage


    Original     		PDF XN04210 XN4210) panasonic VF-8Z UN1210 UNR1210 XN04210 XN4210

    121F

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and


    Original     		PDF 121D/121E/121F/121K/121L 121D/121E/121F/121K/121L) UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 121F UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    UN1210

    Abstract: UNR1210 XN02210 XN2210
    Text: Composite Transistors XN02210 XN2210 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● 5 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XN02210 XN2210) UNR1210 UN1210) UN1210 XN02210 XN2210

    UNR1210

    Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
    Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits (1.0) 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ


    Original     		PDF UNR121x UN121x UN1210) UN1211) UN1212) UN1213) UN1214) UN1215) UN1216) UN1217) UNR1210 UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219

    panasonic VF-8Z

    Abstract: UN1210 UNR1210 XP04210 XP4210
    Text: Composite Transistors XP04210 XP4210 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.


    Original     		PDF XP04210 XP4210) UNR1210 UN1210) panasonic VF-8Z UN1210 XP04210 XP4210