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    UPA800T Price and Stock

    California Eastern Laboratories (CEL) UPA800T-T1

    RF TRANS 2 NPN 10V 8GHZ 6SO
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    DigiKey UPA800T-T1 Cut Tape 6 1
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    UPA800T-T1 Reel 3,000
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    California Eastern Laboratories (CEL) UPA800T-A

    RF TRANS 2 NPN 10V 8GHZ SOT363
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    California Eastern Laboratories (CEL) UPA800T-T1-A

    RF TRANS 2 NPN 10V 8GHZ SOT363
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    California Eastern Laboratories (CEL) UPA800T

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    Bristol Electronics UPA800T 2
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    Quest Components UPA800T 1
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    UPA800T Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA800T Unknown SMD, High Frequency Amplifier, 20V 35mA 110mW, Silicon NPN Transistor (integrated circuit) Original PDF
    UPA800T NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    UPA800T-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF 8GHZ SOT363 Original PDF
    UPA800TF NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA800TF NEC 6-pin small MM high frequency double transistor array Original PDF
    uPA800TKB-T1 NEC High-frequency Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Mini Mold Original PDF
    UPA800T-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN HF FT=8GHZ SOT-363 Original PDF
    UPA800T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD Original PDF
    uPA800T-T1 NEC HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI Original PDF
    UPA800T-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN HF FT=8GHZ SOT363 Original PDF
    UPA800T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA800T-T1B NEC 6-pin small MM high frequency double transistor array Original PDF

    UPA800T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 8730

    Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA800T NE680 UPA800T 24-Hour transistor 8730 NPN Transistor 8440 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240

    NF NPN Silicon Power transistor TO-3

    Abstract: UPA800T bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 NE680 S21E UPA800T-T1 97 transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz


    Original     		PDF UPA800T NE680 UPA800T 24-Hour NF NPN Silicon Power transistor TO-3 bjt microwave 15 GHz npn bjt microwave GHz transistor mje 350 S21E UPA800T-T1 97 transistor

    transistor 1249

    Abstract: UPA800T 1788
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T UPA800T NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS BF 3.84e-16 MJC 0.5 124.9 XCJC NF 1.04 CJS VAF 11.87 VJS 0.75 IKF 0.027 MJS ISE 1e-14 FC 0.5 10e-12 NE 2.17 TF BR


    Original     		PDF UPA800T UPA800T 84e-16 1e-14 01e-4 358e-12 21e-12 10e-12 635e-9 24-Hour transistor 1249 1788

    transistor k 4110

    Abstract: mje 3007 UPA800T 3019 Transistor BJT 5240
    Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz


    Original     		PDF NE680 UPA800T UPA800T 24-Hour transistor k 4110 mje 3007 3019 Transistor BJT 5240

    California Eastern Laboratories OR NEC

    Abstract: S21E UPA800TF NE680 SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar Junction Transistor npn
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800TF OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm • LOW HEIGHT PROFILE: Just 0.60 mm high • EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE PACKAGE OUTLINE TS06


    Original     		PDF UPA800TF OT-363 UPA800TF NE680 UPA800TF-T1, 24-Hour California Eastern Laboratories OR NEC S21E SILICON HIGH POWER bipolar npn TRANSISTOR Bipolar Junction Transistor npn

    TRANSISTOR C 6090 npn

    Abstract: ic 7407 PT 3195 rf power transistor UPA800T nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 NE680 Mje 1533
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    Original     		PDF UPA800T NE680 UPA800T TRANSISTOR C 6090 npn ic 7407 PT 3195 rf power transistor nec K 3570 NEC 5623 UPA800T-T1-A LB 11910 Mje 1533

    UPA801T

    Abstract: UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. S06 2.1±0.1 1.25±0.1 2.0±0.2 RL 0.65 1 1.3 0.65 2 3 6 0.2 +0.1 -0 5 4 DOT ON BACK SIDE 0.9 ± 0.1 0.7 0 ~0.1 PART MARKING NUMBER UPA800T


    Original     		PDF UPA800T UPA809T UPA801T UPA810T UPA802T UPA811T UPA806T UPA812T UPA807T UPA814T UPA801T UPA800T UPA802T upa801 UPA814T UPA806T UPA807T UPA808T UPA809T UPA810T

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132

    UPA800T

    Abstract: NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 N E680 Die in a 2 mm x 1.25 m m package LOW NOISE FIGURE: 2.1 ± 0.1 NF = 1.9 dB T Y P at 2 G Hz


    OCR Scan     		PDF UPA800T UPA800T 24-Hour NPN silicon high frequency transistor NF NPN Silicon Power transistor TO-3

    ls 7413 n

    Abstract: V 8623 transistor UPA800T HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor
    Text: UPA800T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: • HIGH GAIN: • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		PDF NE680 UPA800T UPA800T 24-Hour ls 7413 n V 8623 transistor HA 4016 13.562 mje 3007 BJT 5240 nec k 3115 NEC k 3115 transistor

    3187 transistor

    Abstract: UPA800T
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA800T PRELIMINARY FEATURES • OUTLINE DIMENSIONS U nits in m m SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S 21 E|2 = 7.5 dB TYP at 2 GHz


    OCR Scan     		PDF UPA800T NE680 UPA800T 3187 transistor

    transistor NEC D 587

    Abstract: de 535
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS


    OCR Scan     		PDF UPA800T 2SC4228) uPA800T transistor NEC D 587 de 535

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363

    upa dual transistor

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR U P A q00T PRELIMINARY FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz HIGH GAIN: |S21 E|2 = 7.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE680 UPA800T UPA800T-T1, bM27525 00b5771 upa dual transistor

    transistor mje 350

    Abstract: UPA800T 40164
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPMQQj OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: N F = 1.9 dB TYP at 2 GHz • HIGH GAIN: IS2 1EI2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT


    OCR Scan     		PDF NE680 UPA800T 84e-16 1e-14 358e-12 162e-12 7e-12 635e-9 UPA800T transistor mje 350 40164