UPC1656C
Abstract: nec 8749
Text: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPC1656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN VCC = 10 V 25 10 • 10.5 dBm OUTPUT POWER Gain, GS dB • LOW COST PACKAGE • 50 Ω GAIN BLOCK GS 20 8 6
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UPC1656C
UPC1656C
34-6393/FAX
nec 8749
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UPC1651
Abstract: UPC1651G UPCI65IG 1SV80 UPCI651G UPC1656C UPC1653 uPC1655 uPC1656 uPC1655C
Text: California Eastern Laboratories AN-SI-1005 APPLICATION NOTE Silicon Microwave Broadband Amplifier MMICs Introduction In the field of communications equipment, and particularly consumer equipment such as cable TV and super high frequency recievers or television tuners, there is a great demand for amplifiers in the range from UHF to microwave.
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AN-SI-1005
UPC1651
UPC1651G
UPCI65IG
1SV80
UPCI651G
UPC1656C
UPC1653
uPC1655
uPC1656
uPC1655C
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UPC1651
Abstract: UPC1651G UPCI651G 1SV80 UPC1653 UPC1654A UPC1656C UPC1652G uPC1652 uPC1655
Text: California Eastern Laboratories AN-SI-1005 APPLICATION NOTE Silicon Microwave Broadband Amplifier MMICs Introduction In the field of communications equipment, and particularly consumer equipment such as cable TV and super high frequency recievers or television tuners, there is a great demand for amplifiers in the range from UHF to microwave.
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AN-SI-1005
24-Hour
UPC1651
UPC1651G
UPCI651G
1SV80
UPC1653
UPC1654A
UPC1656C
UPC1652G
uPC1652
uPC1655
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C1656C
Abstract: AD 8723
Text: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPC1656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN • POWER GAIN OF 19 d B @ f = 500 MHz • 10.5 dBm OUTPUT POWER m T> • LOW COST PACKAGE • 50 £2 GAIN BLOCK
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UPC1656C
UPC1656C
C1656C
AD 8723
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UPC1656C
Abstract: p124-4 TIPC-16-56
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1656C SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The ¿iPC1656C CONNECTION DIAGRAM Top View is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band
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uPC1656C
iPC1656C
qPC1656C
P8C-100-300B
p124-4
TIPC-16-56
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upb566c
Abstract: UPB562AC UPB552C UPB554C UPB569C UPB571 uPB555 UPB566 UPC1663C UPB551C
Text: AMPLIFIE PART NUMBER PACKAGE UPC1655C UPC1656C 'At 3 dB down. DIFFERENTIAL AMPLIFIERS PART NUMBER DIFFERENTIAL GAIN* PROPAGATION DELAY SUPPLY VOLTAGE PACKAGE ns UPC1663B UPC1663C UPC1663P UPC1664C *AII gain select pins are open SILICON PRESCALERS PART NUMBER FREQUENCY
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UPC1655C
UPC1656C
UPC1663B
UPC1663C
UPC1663P
UPC1664C
UPB551C
UPB552C
UPB553AC
UPB554C
upb566c
UPB562AC
UPB552C
UPB554C
UPB569C
UPB571
uPB555
UPB566
UPB551C
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UPB566
Abstract: UPB562AC upb566c UPB571C nec upB562AC UPB551C UPB554C UPB571 uPB555 UPB552C
Text: Additional Silicon Monolithic Circuit Products NEC/ CALIFORNIA 1SE D • L^27H14 0DD17fl7 5 ■ AMPLIFIERS PART NUMBER BW * GHz Gv @ 0.5 GHz (dB) UPC1655C UPC1656C 0.9 1.2 18 19 PldB @ 0.5 GHz (dBm) NF @ 0.5 GHz (dB) 5.5 10.5 5.0 10.5 (V) Icc (mA) PACKAGE
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b427H14
00D17fl7
UPC1655C
UPC1656C
UPC1663B
UPC1663C
UPC1663P
UPC1664C
PB566C
UPB567HA
UPB566
UPB562AC
upb566c
UPB571C
nec upB562AC
UPB551C
UPB554C
UPB571
uPB555
UPB552C
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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Untitled
Abstract: No abstract text available
Text: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER UPo i 656c NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN POWER GAIN OF 19 dB @ f = 500 MHz 10.5 dBm OUTPUT POWER a -a LOW COST PACKAGE 50 Q GAIN BLOCK o z 60 DESCRIPTION
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1656C
UPC1656C
L427525
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uPC1656C
Abstract: Monolithic Amplifier NEC
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC1656C SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The 656C CONNECTION DIAGRAM Top View is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band
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uPC1656C
Monolithic Amplifier NEC
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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nec 8749
Abstract: UPC1656C TA 8639 P
Text: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER ijpci656C NOISE FIGURE AND VOLTAGE GAIN vs. FREQUENCY FEATURES 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN POWER GAIN OF 19 dB @ f = 500 MHz 10.5 dBm OUTPUT POWER m T> LOW COST PACKAGE 50 n GAIN BLOCK i O 50 DESCRIPTION
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ijpci656C
UPC1656C
nec 8749
TA 8639 P
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1656C
Abstract: UPC1656C
Text: 850 MHz WIDE-BAND SILICON MMIC AMPLIFIER npC1656C FEATURES NOISE FIGURE AND v o l t a g e - vs. FREQUENCY g a in • 850 MHz FREQUENCY RESPONSE @ 3 dB DOWN
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npC1656C
UPC1656C
1656C
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