UPC1677
Abstract: UPC1677B
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B* *For Hi-Rel Applications Only INSERTION GAIN vs. FREQUENCY VCC = 5 V • HIGH POWER OUTPUT: +19.5 dBm 40 30 • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down Gain,GS dB 20
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UPC1677B*
UPC1677
UPC1677B)
24-Hour
UPC1677B
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C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
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UPC1677B
C1677
UPC1678B
C1678
UPG100B
UPG101B
UPG103B
24-Hour
C1678
c1677
UPC1678B
UPG100B
uPG101
MARKING 106
UPG101B
G100
G101
G103
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Untitled
Abstract: No abstract text available
Text: SILICON MMIC NEC UPC1677B/C PRELIMINARY 1.7 GHz Medium Power Wide-Band Amplifier FEATURES PHYSICAL DIMENSIONS • H IG H P O W E R O U T P U T : + 19.5 dBm Units in mm UPC1677B • EXCELLENT FR E Q U E N C Y RESPONSE: 1 27 ± 0 1 1.27±0 1 1.7GHz TYP at 3 dB Down
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UPC1677B/C
UPC1677B
UPC1677
UPC1677C
UPC1677B/C,
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nec d 588
Abstract: UPC1677C UPC1677 UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586
Text: E C/ CALIFORNIA SbE D b427414 DDDSbSM TÒT * N E C C NEC UPC1677B UPC1677C UPC1677P 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER =T-1H-6-Ol OUTUNE DIMENSIONS FEATURES • HIGH POWER OUTPUT + 1 9 .5 d B m Units in mm O U T U N E B08 • EXCELLENT FREQUENCY RESPONSE:
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b427414
0002b54
UPC1677
UPC1677B)
UPC1677C)
UPC1677P)
PARA5-89
b4E7414
D002bS6
nec d 588
UPC1677C
UPC1677B
UPC1677P
8-lead 3.gnd dip 7.vcc
NEC D 586
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UPC1677C
Abstract: UPC1677B
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm
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UPC1677B
UPC1677C
upci677c
UPC1677
UPC1677B)
UPC1677C
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upc 577
Abstract: 1677c
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES_ UPC1677B UPC1677C UPC1677C NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT: +19.5 dBm • EXCELLENT FREQUENCY RESPONSE: 1.7 G Hz Typ at 3 dB Down • HIGH POWER GAIN: 24 dB Typ at 500 MHz
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UPC1677B
UPC1677C
UPC1677C
UPC1677B)
1677C
stringe30
upc 577
1677c
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Untitled
Abstract: No abstract text available
Text: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1677B UPC1677C OUTLINE DIMENSIONS FEATURES • H IG H POW ER O UTPUT: + 19.5 dBm Units in mm OUTLINE B08 • EXCELLENT FREQ UENC Y RESPONSE: 1.27±0.1 1.27+0,1 1.7GHz TYP at 3 dB Down (LEADS 2,4,6.8) 0.6
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UPC1677B
UPC1677C
UPC1677
UPC1677B,
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UPC1
Abstract: UPC1677 UPC1677B UPC1677C 8-lead 3.gnd dip 7.vcc 677c
Text: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C OUTLINE DIM ENSIONS • HIGH POWER OUTPUT: +19.5 dBm Units in mm O UTLINE B08 • EXCELLENT FREQUENCY RESPONSE: 1.7GHz TYP at 3 dB Down 1.27±0.1 1.27±0.1 (LEADS 2,4,6.8) 0.6
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UPC1677B
UPC1677C
UPC1677
UPC1677B)
UPC1677C)
UPC1
UPC1677C
8-lead 3.gnd dip 7.vcc
677c
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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UPC2712B
Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Text: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E
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GET-30698
NE89400
UPB584B
10Cycies
Page31
NE02100
Page35/37
UPC1677P
1678P
UPC2712B
UPB1509B
upc2709b
NE85608-L
NE68108
NE73408
UPB1508B
NE85608
NE41607
NE02103
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Untitled
Abstract: No abstract text available
Text: 1.7 GHz MEDIUM POWER BROADBAND SILICON M M IC AMPLIFIER upG1677C UpG1677p UPC1677C INSERTION GAIN vs. FREQUENCY FEATURES_ • HIGH POWER OUTPUT: +19.5 dBm V C C -5 V • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down 40 30 • HIGH POWER GAIN: 24 dBtyp at 0.5 GHz
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upG1677C
UpG1677p
UPC1677C
UPC1677
UPC1677B
UPC1677C
UPC1677B,
UPC1677C,
UPC1677P
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