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    UPF14060 Search Results

    UPF14060 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPF14060 Cree LDMOS FETs in Class AB Operation Linear 1.4 GHz Original PDF
    UPF14060F Cree 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF14060F Cree FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UPF14060P Cree 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Original PDF
    UPF14060P Cree FET Transistor, 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UPF14060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cree rf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original
    UPF14060 UPF14060F cree rf UPF14060 UPF14060F UPF14060P PDF

    Untitled

    Abstract: No abstract text available
    Text: UPF14060 60W, 1.66 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications at 1400 MHz. Rated with a minimum output power of 60W, it is ideal for 16 QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in


    Original
    UPF14060 UPF14060F 540mA 540mA, PDF

    ultrarf

    Abstract: UPF14060 UPF14060F UPF14060P
    Text: UPF14060 60W, 1.4GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS Designed for DCS base station applications at 1400MHz. Rated with a minimum output power of 60W, it is ideal for 16QAM, CDMA, TDMA, GSM, and Multi-Carrier Power Amplifiers in Class A or AB


    Original
    UPF14060 1400MHz. 16QAM, UPF14060F ultrarf UPF14060 UPF14060F UPF14060P PDF

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


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    BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b PDF