Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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Original
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UTD484
UTD484
UTD484L-TN3-T
UTD484G-TN3-T
O-252
UTD484L-TN3-R
UTD484G-TN3-R
UTD484L-K08-3030-R
UTD484G-K08-3030-R
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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Original
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UTD484
UTD484
UTD484L-TN3-T
UTD484G-TN3-T
O-252
UTD484L-TN3-R
UTD484G-TN3-R
UTD484G-K08-3030-R
QW-R502-207
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PDF
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utd484
Abstract: UTD484-TN3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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Original
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UTD484
UTD484
UTD484L
UTD484-TN3-R
UTD484L-TN3-R
UTD484-TN3-T
UTD484L-TN3-T
QW-R502-207
UTD484-TN3-R
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PDF
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DIODE RL 207
Abstract: utd484
Text: UNISONIC TECHNOLOGIES CO., LTD UTD484 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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Original
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UTD484
UTD484
UTD484-TN3-R
UTD484L-TN3-R
O-252
UTD484-TN3-T
UTD484L-TN3-T
UTD484-K08-3030-R
UTD484L-K08-3030-R
DIODE RL 207
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UTD484 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UTD484 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM
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Original
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UTD484
UTD484
UTD484-TN3-R
UTD484L-TN3-R
O-252
UTD484-TN3-T
UTD484L-TN3-T
UTD484-K08-3030-R
UTD484L-K08-3030-R
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PDF
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Untitled
Abstract: No abstract text available
Text: 友順科技股份有限公司 UNISONIC TECHNOLOGIES CO., LTD. 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-150103 Issue Date DFN封裝印字規則變更 Marking Rule Change of DFN Jan-27-2015 Page 1 of 2 變更主旨(TITLE):
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IC-PPCN-150103
Jan-27-2015
QR-0205-01
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