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    Microchip Technology Inc VN10KN3-G-P002

    MOSFET N-CH 60V 310MA TO92-3
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    Microchip Technology Inc VN10KN3-G

    MOSFET N-CH 60V 310MA TO92-3
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    Analog Technologies Inc AHV24VN10KV1MAW

    High Voltage - Non-Isolated
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    DigiKey AHV24VN10KV1MAW Bulk 5 1
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    AHV24VN10KV1MAW Ammo Pack 1
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    Analog Technologies Inc AHV12VN10KV1MAW

    High Voltage - Non-Isolated
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    DigiKey AHV12VN10KV1MAW Bulk 3 1
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    AHV12VN10KV1MAW Ammo Pack 1
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    Analog Technologies Inc AHV24VN10KV5MAW

    High Voltage - Non-Isolated
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    DigiKey AHV24VN10KV5MAW Bulk 2 1
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    VN10K Datasheets (57)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VN10K Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    VN10KC Vishay Intertechnology N-Channel 60-V (D-S) MOSFET Original PDF
    VN10KC-T1 Vishay Transistor Mosfet N-CH 60V 0.31A 3SC-59 REEL Original PDF
    VN10KE Calogic N-Channel Enhancement-Mode MOS Transistor, Zener Gate Protected Scan PDF
    VN10KE Unknown FET Data Book Scan PDF
    VN10KE Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VN10KE Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VN10KE Unknown Shortform Transistor PDF Datasheet Short Form PDF
    VN10KE Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VN10KE Siliconix N-Channel Enhancement Mode MOS Transistors Zener Diode Protected Gate Scan PDF
    VN10KE Temic Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Scan PDF
    VN10KE Vishay N-Channel Enhancement-Mode MOSFET Transistors Scan PDF
    VN10KE Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VN10KE Vishay Telefunken N-Channel Enhancement-Mode MOS Transistors Scan PDF
    VN10KE-2 Vishay Transistor Mosfet N-CH 60V 0.17A 3TO-206AC Original PDF
    VN10KLS Vishay Intertechnology N-Channel 60-V (D-S) MOSFET with Zener Gate Original PDF
    VN10KLS Vishay Telefunken N-Channel Enhancement-Mode MOSFET Original PDF
    VN10KLS Vishay N-Channel Enhancement-Mode MOSFET Transistors Scan PDF
    VN10KLS-TR1 Vishay Transistor Mosfet N-CH 60V 0.31A 3TO-92S T/R Original PDF
    VN10KM Temic Semiconductors Zener Gate Protected Original PDF

    VN10K Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VN10K

    Abstract: No abstract text available
    Text: VN10K Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN10K 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si


    Original
    VN10K VN10K A022009 PDF

    VN10K

    Abstract: VN0106N3 VN10KN3-G sivn
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Applications Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input


    Original
    VN10K DSFP-VN10K B031411 VN10K VN0106N3 VN10KN3-G sivn PDF

    10kls

    Abstract: 0610L VN10KLS 2222L VN0610L VN2222L
    Text: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5


    Original
    VN0610L, VN10KLS, VN2222L VN0610L VN10KLS 08-Apr-05 10kls 0610L VN10KLS 2222L VN0610L VN2222L PDF

    10kls

    Abstract: 2222l 0610L VN10KLS VN2222L marking CODE VN VN0610L
    Text: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5


    Original
    VN0610L, VN10KLS, VN2222L VN0610L VN10KLS 18-Jul-08 10kls 2222l 0610L VN10KLS VN2222L marking CODE VN VN0610L PDF

    MOSFET vn2222l

    Abstract: VN10KLS
    Text: VN0610L, VN10KE/KLS, VN2222L Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KE 5 @ VGS = 10 V 0.8 to 2.5 0.17 5 @ VGS = 10 V


    Original
    VN0610L, VN10KE/KLS, VN2222L VN0610L VN10KE VN10KLS VN2222L O-226AA) S-58620--Rev. 21-Jun-99 MOSFET vn2222l PDF

    Untitled

    Abstract: No abstract text available
    Text: VN10KM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)15 I(D) Max. (A)310m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)


    Original
    VN10KM PDF

    10kls

    Abstract: 2222L VN2222L VN10KLS 0610L VN0610L vishay siliconix code marking to-92
    Text: VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V D-S MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = 10 V 0.8 to 2.5 0.27 5 @ VGS = 10 V 0.8 to 2.5 0.31 7.5 @ VGS = 10 V 0.6 to 2.5


    Original
    VN0610L, VN10KLS, VN2222L VN0610L VN10KLS O-226AA) S-04279--Rev. 16-Jul-01 10kls 2222L VN2222L VN10KLS 0610L VN0610L vishay siliconix code marking to-92 PDF

    vn10K

    Abstract: VN10KN
    Text: VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination


    Original
    VN10K DSFP-VN10K A102108 VN10KN PDF

    vn10K

    Abstract: No abstract text available
    Text: 0ì Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BVdss / BVdgs ^DS ON ' d (on ) (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    VN10K VN10KN9 VN10KN3 vn10K PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B V qqs R dS<ON max) 60V 5.0ÌÌ Order Number / Package If BV dss / TO-92 0.75A VN10KN3 Features Advanced DMOS Technology □ Free from secondary breakdown


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    VN10K VN10KN3 PDF

    VN10KN

    Abstract: VN10KN9 vn10k
    Text: V N 10K Mï Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package BV0SS / ^DS<ON *D ON) BV dgs (max) (min) TO-52 TO-92 60V 5£2 0.5A VN10KN9 VN10KN3 Advanced DMOS Technology High Reliability Devices


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    VN10KN9 VN10KN3 300ns, VN10K VN10KN vn10k PDF

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J PDF

    Untitled

    Abstract: No abstract text available
    Text: un itti llll SEME VN10KCSM4 LAB N-CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.02±0.20 (0.04 ± 0.006) 2.03 ± 0.20 (0.08 ± 0.008) LCC3 - CERAMIC SURFACE MOUNT PACKAGE PIN 1 - Drain Underside View PIN 2 - N/C PIN 3 - Gate ABSOLUTE MAXIMUM RATINGS


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    VN10KCSM4 300ns PDF

    Untitled

    Abstract: No abstract text available
    Text: VN10K S u p e rte x inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ R DS ON ^D(ON) BVdgs (max) (min) TO-52 TO-92 60V 5Q 0.75A VN10KN9 VN10KN3 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process


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    VN10K VN10KN9 VN10KN3 PDF

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


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    O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM PDF

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J PDF

    2N6658

    Abstract: VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m 2N6658 VN66AF siliconix VN10KM VN89AF VN88AF 2n6657 2N6656 VN67 VN80AF VN89AD PDF

    TO206AC

    Abstract: No abstract text available
    Text: VNDP06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-52 TO-206AC VN10KE Single TO-92 (TO-226AA)VN0610L, VN2222L Single TO-237 VN10KM Single Chip • Available as VNDP1CHP .Bissate DEVICE TYPÍCAL CHARACTERISTICS Ohmic Region Characteristics


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    VNDP06 O-206AC) O-226AA) O-237 VN10KE VN0610L, VN2222L VN10KM VNDP06 TO206AC PDF

    VN10KM

    Abstract: No abstract text available
    Text: ÜBSSb VNDP1 DIE N-Channel Enhancement-Mode MOS Transistor VNDP1CHP* VN0610L VN10KE VN10KM VN2222L ‘ Meets or exceeds specification for all part numbers listed below Gate Pad 0.0088 0 . 224 0.0063 ( 0.161 Source Pad For additional design information please consult the


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    VN0610L VN10KE VN10KM VN2222L VNDP06. PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 5.0Q. 0.75 A O rder N um ber / Package TO-92 VN10KN3 Features Advanced DMOS Technology □


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    VN10K VN10KN3 PDF

    hh 004 TO92

    Abstract: VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m hh 004 TO92 VN2406M VN2406L vn1710m VN1206M VN1706M VN2406B siliconix VN10KM VN2410M VN1206L PDF

    siliconix VN10KM

    Abstract: VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VN2406M


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m siliconix VN10KM VN10KM VN2222KM bsr65 BSR64 VN10LM VN2222LM VQ1000J/P VN0610L VN10KE PDF

    VN88AD

    Abstract: VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdow n V olta ge (Volts) 60 60 • d C on tin u ou s (Amps) Power D issipation (Watts) . Part Num ber 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3


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    vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN88AD VN66AF 2N6658 VN89AF VN0808M VN88AO siliconix VN10KM VN46AF BSR67 VN89AD PDF

    siliconix VN10KM

    Abstract: VN10KM VN10LM VN2222KM BSR64 VN2222LM VN2222 BSR65 TO-237
    Text: s VN2222LM VN2222KM VN10KM - VN 10LM ■ VN2222KM VN2222LM H Siliconix 60V MOSPOWER N-Channel Enhancement M ode These power FETs are designed especially for low power high frequency inverters, inter­ face to CMOS and TTL logic, and line drivers. FEATURES


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    VN10KM VN2222KM VN2222LM O-237 VN10LM BSR65 siliconix VN10KM VN10KM VN2222KM BSR64 VN2222LM VN2222 TO-237 PDF